Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors

Min Ching Chu; Jagan Singh Meena; Po-Tsun Liu; Han Ping D. Shieh; Hsin Chiang You; Yen Wei Tu; Feng Chih Chang; Fu-Hsiang Ko

doi:10.7567/APEX.6.076501

Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors

Min Ching Chu, Jagan Singh Meena^*, Po-Tsun Liu, Han Ping D. Shieh, Hsin Chiang You, Yen Wei Tu, Feng Chih Chang, Fu-Hsiang Ko

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O₂) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasmasurface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O₂ plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs.

Original language	English
Article number	076501
Journal	Applied Physics Express
Volume	6
Issue number	7
DOIs	https://doi.org/10.7567/APEX.6.076501
State	Published - Jul 2013

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title = "Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors",

abstract = "A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O2) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasmasurface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O2 plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs.",

author = "Chu, {Min Ching} and Meena, {Jagan Singh} and Po-Tsun Liu and {D. Shieh}, {Han Ping} and You, {Hsin Chiang} and Tu, {Yen Wei} and Chang, {Feng Chih} and Fu-Hsiang Ko",

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AU - Chu, Min Ching

AU - Meena, Jagan Singh

AU - Liu, Po-Tsun

AU - D. Shieh, Han Ping

AU - You, Hsin Chiang

AU - Tu, Yen Wei

AU - Chang, Feng Chih

AU - Ko, Fu-Hsiang

PY - 2013/7

Y1 - 2013/7

N2 - A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O2) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasmasurface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O2 plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs.

AB - A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O2) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasmasurface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O2 plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs.

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JO - Applied Physics Express

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Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors

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