Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors

Wei Tsung Chen; Shih Yi Lo; Shih Chin Kao; Hsiao-Wen Zan; Chuang Chuang Tsai; Jian Hong Lin; Chun Hsiang Fang; Chung Chun Lee

doi:10.1109/LED.2011.2165694

Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors

Wei Tsung Chen^*, Shih Yi Lo, Shih Chin Kao, Hsiao-Wen Zan, Chuang Chuang Tsai, Jian Hong Lin, Chun Hsiang Fang, Chung Chun Lee

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

200 Scopus citations

Abstract

This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 \times 10} ⁴ and 371times 10 ^-4 respectively, is achieved by annealing and passivation.

Original language	English
Article number	6026903
Pages (from-to)	1552-1554
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/LED.2011.2165694
State	Published - 1 Nov 2011

Keywords

Bias stress
IGZO
Stability

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10.1109/LED.2011.2165694

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@article{03398301cec44629b9ea40e357a1969b,

title = "Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors",

abstract = " This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 \times 10} 4 and 371times 10 -4 respectively, is achieved by annealing and passivation.",

keywords = "Bias stress, IGZO, Stability",

author = "Chen, {Wei Tsung} and Lo, {Shih Yi} and Kao, {Shih Chin} and Hsiao-Wen Zan and Tsai, {Chuang Chuang} and Lin, {Jian Hong} and Fang, {Chun Hsiang} and Lee, {Chung Chun}",

year = "2011",

month = nov,

day = "1",

doi = "10.1109/LED.2011.2165694",

language = "English",

volume = "32",

pages = "1552--1554",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors

AU - Chen, Wei Tsung

AU - Lo, Shih Yi

AU - Kao, Shih Chin

AU - Zan, Hsiao-Wen

AU - Tsai, Chuang Chuang

AU - Lin, Jian Hong

AU - Fang, Chun Hsiang

AU - Lee, Chung Chun

PY - 2011/11/1

Y1 - 2011/11/1

N2 - This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 \times 10} 4 and 371times 10 -4 respectively, is achieved by annealing and passivation.

AB - This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 \times 10} 4 and 371times 10 -4 respectively, is achieved by annealing and passivation.

KW - Bias stress

KW - IGZO

KW - Stability

UR - http://www.scopus.com/inward/record.url?scp=80054991120&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2165694

DO - 10.1109/LED.2011.2165694

M3 - Article

AN - SCOPUS:80054991120

SN - 0741-3106

VL - 32

SP - 1552

EP - 1554

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 6026903

ER -

Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors

Abstract

Keywords

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