@inproceedings{ee65b502d6b740429e91802bc667e315,
title = "Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching",
abstract = "A unified microscopic principle is proposed to clarify resistive switching behaviors of transition metal oxide based resistive random access memories (RRAM) for the first time. In this unified microscopic principle, both unipolar and bipolar switching characteristics of RRAM are correlated with the distribution of localized oxygen vacancies in the oxide switching layer, which is governed by the generation and recombination with dissociative oxygen ions. Based on the proposed microscopic principle, an atomistic simulation method is developed to evaluate critical memory performance, and successfully conduct the device optimization. The experimental data are well in line with the developed simulation method.",
author = "B. Gao and Kang, {J. F.} and Chen, {Y. S.} and Zhang, {F. F.} and B. Chen and P. Huang and Liu, {L. F.} and Liu, {X. Y.} and Wang, {Y. Y.} and Tran, {X. A.} and Wang, {Z. R.} and Yu, {H. Y.} and Albert Chin",
year = "2011",
doi = "10.1109/IEDM.2011.6131573",
language = "English",
isbn = "9781457705052",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "17.4.1--17.4.4",
booktitle = "2011 International Electron Devices Meeting, IEDM 2011",
note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",
}