Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits

Ming-Dou Ker*, Kuo Chun Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

182 Scopus citations

Abstract

An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.

Original languageEnglish
Pages (from-to)235-249
Number of pages15
JournalIEEE Transactions on Device and Materials Reliability
Volume5
Issue number2
DOIs
StatePublished - 1 Jun 2005

Keywords

  • ESD protection circuits
  • Electrostatic discharge (ESD)
  • Latchup
  • Silicon controlled rectifier (SCR)

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