Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits

Ming-Dou Ker*, Kuo Chun Hsu

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    141 Scopus citations

    Abstract

    An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.

    Original languageEnglish
    Pages (from-to)235-249
    Number of pages15
    JournalIEEE Transactions on Device and Materials Reliability
    Volume5
    Issue number2
    DOIs
    StatePublished - 1 Jun 2005

    Keywords

    • ESD protection circuits
    • Electrostatic discharge (ESD)
    • Latchup
    • Silicon controlled rectifier (SCR)

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