TY - GEN
T1 - Over-Voltage Protection on the CC Pin of USB Type-C Interface against Electrical Overstress Events
AU - Ke, Chao Yang
AU - Ker, Ming Dou
PY - 2020/4/28
Y1 - 2020/4/28
N2 - In USB type-C interface, owing to the shrinking space between the pins of connector and the required high-power delivery, the electrical overstress (EOS) events due to some pins shorting to VBUS pin during plugging or unplugging operations had been reported. In this work, an over voltage protection (OVP) design on the CC pin of USB type-C IC was proposed, where a HVNMOS as a pass transistor was used to avoid the CC pin from EOS. An EOS detection circuit is proposed to turn off the gate of the HVNMOS when EOS stressing on the CC pin, which can mitigate the hot carrier degradation (HCD) of HVNMOS. Silicon chip fabricated in a 0.15-μm BCD technology has been measured to successfully verify the proposed OVP design in device level and circuit level.
AB - In USB type-C interface, owing to the shrinking space between the pins of connector and the required high-power delivery, the electrical overstress (EOS) events due to some pins shorting to VBUS pin during plugging or unplugging operations had been reported. In this work, an over voltage protection (OVP) design on the CC pin of USB type-C IC was proposed, where a HVNMOS as a pass transistor was used to avoid the CC pin from EOS. An EOS detection circuit is proposed to turn off the gate of the HVNMOS when EOS stressing on the CC pin, which can mitigate the hot carrier degradation (HCD) of HVNMOS. Silicon chip fabricated in a 0.15-μm BCD technology has been measured to successfully verify the proposed OVP design in device level and circuit level.
KW - electrical overstress (EOS)
KW - hot carrier degradation (HCD)
KW - over-voltage protection (OVP)
KW - USB type-C
UR - http://www.scopus.com/inward/record.url?scp=85088373517&partnerID=8YFLogxK
U2 - 10.1109/IRPS45951.2020.9129160
DO - 10.1109/IRPS45951.2020.9129160
M3 - Conference contribution
AN - SCOPUS:85088373517
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE International Reliability Physics Symposium, IRPS 2020
Y2 - 28 April 2020 through 30 May 2020
ER -