Output power enhancement of light-emitting diodes with defect passivation layer

Ming Hua Lo*, Po Min Tu, Yuh Jen Cheng, Chao Hsun Wang, Cheng Wei Hung, Shih Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing Chung Wang, Chun Yen Chang, Che Ming Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ∼4×107 cm-2. The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices V
StatePublished - 2010
EventGallium Nitride Materials and Devices V - San Francisco, CA, United States
Duration: 25 Jan 201028 Jan 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceGallium Nitride Materials and Devices V
Country/TerritoryUnited States
CitySan Francisco, CA


  • Defect passivation
  • GaN


Dive into the research topics of 'Output power enhancement of light-emitting diodes with defect passivation layer'. Together they form a unique fingerprint.

Cite this