Output power enhancement of light-emitting diodes with defect passivation layer

Ming Hua Lo; Po Min Tu; Yuh Jen Cheng; Chao Hsun Wang; Cheng Wei Hung; Shih Chieh Hsu; Hao-Chung Kuo; Hsiao-Wen Zan; Shing Chung Wang; Chun Yen Chang; Che Ming Liu

doi:10.1117/12.841513

Output power enhancement of light-emitting diodes with defect passivation layer

Ming Hua Lo^*, Po Min Tu, Yuh Jen Cheng, Chao Hsun Wang, Cheng Wei Hung, Shih Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing Chung Wang, Chun Yen Chang, Che Ming Liu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO₂ deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ∼4×10⁷ cm^-2. The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices V
DOIs	https://doi.org/10.1117/12.841513
State	Published - 2010
Event	Gallium Nitride Materials and Devices V - San Francisco, CA, United States Duration: 25 Jan 2010 → 28 Jan 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7602
ISSN (Print)	0277-786X

Conference

Conference	Gallium Nitride Materials and Devices V
Country/Territory	United States
City	San Francisco, CA
Period	25/01/10 → 28/01/10

Keywords

Defect passivation
GaN

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10.1117/12.841513

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Lo, M. H., Tu, P. M., Cheng, Y. J., Wang, C. H., Hung, C. W., Hsu, S. C., Kuo, H.-C., Zan, H.-W., Wang, S. C., Chang, C. Y., & Liu, C. M. (2010). Output power enhancement of light-emitting diodes with defect passivation layer. In Gallium Nitride Materials and Devices V Article 76021X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7602). https://doi.org/10.1117/12.841513

@inproceedings{e0198cfae14c4501863320a97fbedad7,

title = "Output power enhancement of light-emitting diodes with defect passivation layer",

abstract = "We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ∼4×107 cm-2. The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.",

keywords = "Defect passivation, GaN",

author = "Lo, {Ming Hua} and Tu, {Po Min} and Cheng, {Yuh Jen} and Wang, {Chao Hsun} and Hung, {Cheng Wei} and Hsu, {Shih Chieh} and Hao-Chung Kuo and Hsiao-Wen Zan and Wang, {Shing Chung} and Chang, {Chun Yen} and Liu, {Che Ming}",

year = "2010",

doi = "10.1117/12.841513",

language = "English",

isbn = "9780819479983",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Gallium Nitride Materials and Devices V",

note = "Gallium Nitride Materials and Devices V ; Conference date: 25-01-2010 Through 28-01-2010",

}

Lo, MH, Tu, PM, Cheng, YJ, Wang, CH, Hung, CW, Hsu, SC, Kuo, H-C , Zan, H-W, Wang, SC, Chang, CY & Liu, CM 2010, Output power enhancement of light-emitting diodes with defect passivation layer. in Gallium Nitride Materials and Devices V., 76021X, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7602, Gallium Nitride Materials and Devices V, San Francisco, CA, United States, 25/01/10. https://doi.org/10.1117/12.841513

Output power enhancement of light-emitting diodes with defect passivation layer. / Lo, Ming Hua; Tu, Po Min; Cheng, Yuh Jen et al.
Gallium Nitride Materials and Devices V. 2010. 76021X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7602).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Output power enhancement of light-emitting diodes with defect passivation layer

AU - Lo, Ming Hua

AU - Tu, Po Min

AU - Cheng, Yuh Jen

AU - Wang, Chao Hsun

AU - Hung, Cheng Wei

AU - Hsu, Shih Chieh

AU - Kuo, Hao-Chung

AU - Zan, Hsiao-Wen

AU - Wang, Shing Chung

AU - Chang, Chun Yen

AU - Liu, Che Ming

PY - 2010

Y1 - 2010

N2 - We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ∼4×107 cm-2. The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.

AB - We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ∼4×107 cm-2. The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.

KW - Defect passivation

KW - GaN

UR - http://www.scopus.com/inward/record.url?scp=77951758168&partnerID=8YFLogxK

U2 - 10.1117/12.841513

DO - 10.1117/12.841513

M3 - Conference contribution

AN - SCOPUS:77951758168

SN - 9780819479983

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices V

T2 - Gallium Nitride Materials and Devices V

Y2 - 25 January 2010 through 28 January 2010

ER -

Output power enhancement of light-emitting diodes with defect passivation layer

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