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Origin of traps and charge transport mechanism in hafnia
D. R. Islamov
, V. A. Gritsenko
, C. H. Cheng
,
Albert Chin
Institute of Electronics
Research output
:
Contribution to journal
›
Article
›
peer-review
47
Scopus citations
Overview
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Keyphrases
HfO2
100%
Oxygen Vacancy
100%
Charge Transport
100%
Charge Transport Mechanism
100%
Hafnia
100%
Current-voltage Characteristics
50%
Electron Traps
50%
Theoretical Data
50%
Trap Energy
50%
Phonon-assisted Tunneling
50%
Thermal Trap
50%
Transport Experiment
50%
Physics
Charge Transfer
100%
Oxygen Vacancy
66%
Phonon
33%
Material Science
Oxygen Vacancy
100%
Current Voltage Characteristics
50%
Earth and Planetary Sciences
Charge Transfer
100%
Phonon
33%