Origin of traps and charge transport mechanism in hafnia

D. R. Islamov; V. A. Gritsenko; C. H. Cheng; Albert Chin

doi:10.1063/1.4903169

Origin of traps and charge transport mechanism in hafnia

D. R. Islamov
, V. A. Gritsenko
, C. H. Cheng
, Albert Chin

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO₂. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO₂ was determined based on the charge transport experiments.

Original language	English
Article number	222901
Journal	Applied Physics Letters
Volume	105
Issue number	22
DOIs	https://doi.org/10.1063/1.4903169
State	Published - 1 Dec 2014

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title = "Origin of traps and charge transport mechanism in hafnia",

abstract = "In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO2 was determined based on the charge transport experiments.",

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AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, Albert

PY - 2014/12/1

Y1 - 2014/12/1

N2 - In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO2 was determined based on the charge transport experiments.

AB - In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO2 was determined based on the charge transport experiments.

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DO - 10.1063/1.4903169

M3 - Article

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SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

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Origin of traps and charge transport mechanism in hafnia

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