Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GalnNAs three-quantum-well laser diodes

N. Y. Li; C. P. Hains; K. Yang; J. Lu; J. Cheng; Pei-Wen Li

doi:10.1063/1.124593

Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GalnNAs three-quantum-well laser diodes

N. Y. Li^*, C. P. Hains, K. Yang, J. Lu, J. Cheng, Pei-Wen Li

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We report organometallic vapor-phase epitaxy (OMVPE) growth and optical characteristics of 1.17-1.20 μm double-heterostructure laser diodes with three Ga _0.7 In _0.3 N _0.003 As _0.997 (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs QWs). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17-1.19 μm regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of 1.2kA/cm ² has been successfully demonstrated.

Original language	English
Pages (from-to)	1051-1053
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	8
DOIs	https://doi.org/10.1063/1.124593
State	Published - 23 Aug 1999

Access to Document

10.1063/1.124593

Cite this

@article{807012fe441d4985b81af32016d7bb50,

title = "Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GalnNAs three-quantum-well laser diodes",

abstract = " We report organometallic vapor-phase epitaxy (OMVPE) growth and optical characteristics of 1.17-1.20 μm double-heterostructure laser diodes with three Ga 0.7 In 0.3 N 0.003 As 0.997 (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs QWs). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17-1.19 μm regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of 1.2kA/cm 2 has been successfully demonstrated.",

author = "Li, {N. Y.} and Hains, {C. P.} and K. Yang and J. Lu and J. Cheng and Pei-Wen Li",

year = "1999",

month = aug,

day = "23",

doi = "10.1063/1.124593",

language = "English",

volume = "75",

pages = "1051--1053",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GalnNAs three-quantum-well laser diodes

AU - Li, N. Y.

AU - Hains, C. P.

AU - Yang, K.

AU - Lu, J.

AU - Cheng, J.

AU - Li, Pei-Wen

PY - 1999/8/23

Y1 - 1999/8/23

N2 - We report organometallic vapor-phase epitaxy (OMVPE) growth and optical characteristics of 1.17-1.20 μm double-heterostructure laser diodes with three Ga 0.7 In 0.3 N 0.003 As 0.997 (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs QWs). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17-1.19 μm regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of 1.2kA/cm 2 has been successfully demonstrated.

AB - We report organometallic vapor-phase epitaxy (OMVPE) growth and optical characteristics of 1.17-1.20 μm double-heterostructure laser diodes with three Ga 0.7 In 0.3 N 0.003 As 0.997 (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs QWs). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17-1.19 μm regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of 1.2kA/cm 2 has been successfully demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0032614048&partnerID=8YFLogxK

U2 - 10.1063/1.124593

DO - 10.1063/1.124593

M3 - Article

AN - SCOPUS:0032614048

SN - 0003-6951

VL - 75

SP - 1051

EP - 1053

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GalnNAs three-quantum-well laser diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this