Organometallic vapor phase epitaxial growth of alas_xsb_1-xfilms using tertiarybutylarsine

The deposition of AlAs_xSb_1-x films is studied systematically using an organometallic vapor phase epitaxy growth technique. It is found that the growth of AlAsSb films requires a low V/III ratio to enhance the incorporation of antimony into the solid. The composition of the alloy also depends strongly on the growth temperature. Experimental data shows that films grown at higher temperatures yield much higher AlSb contents in the AlAs_xSb_1-x alloys. This is contrary to the results reported for GaAsSb films. In our study, we are able to grow metastable AlAs_xSb_1-x epitaxial films throughout the entire range of the solid composition for temperatures above 550°C.