Organic transistors fabricated by contact coating at liquid-solid interface for nano-structures

Yu Wen Cheng, Chao Hsuan Chen, Hsin-Fei Meng, Hsiao-Wen Zan, Yu Chiang Chao, Sheng Fu Horng

Research output: Contribution to journalArticlepeer-review


A contact coating method is developed to cover the nano-channels with 100 nm or 200 nm diameter and 400 nm depth with a poly(4-vinylphenol) (PVP). In such coating the nano-channels faces downwards and its vertical position is controlled by a motor. The surface is first lowered to be in immediate contact with the polyvinylpyrrolidone (PVPY) water solution with concentration from 1 to 5 wt%, then pulled at the speed of 0.004 to 0.4 mm/s. By tuning the pulling speed and concentration we can realize conformal, filled, top-only, as well as floating film morphology. For a reproducible liquid detachment from the solid, the sample has a small tilt angle of 3 degree. Contact coating is used to cover the Al grid base of the vertical space-charge-limited transistor with PVPY. Poly(3-hexylthiophene-2,5-diyl) (P3HT) as the semiconductor. The transistor breakdown voltage is raised due to base coverage achieved by contact coating.

Original languageEnglish
Article number107146
JournalAIP Advances
Issue number10
StatePublished - 1 Oct 2015


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