Organic thin-film transistors with low-temperature AlN film as gate insulator

Hsiao-Wen Zan; Kuo Hsi Yen; Chien Hsun Chen; Pu Kuan Liu; Kuo Hsin Ku; Jennchang Hwang

doi:10.1149/1.2372227

Organic thin-film transistors with low-temperature AlN film as gate insulator

Hsiao-Wen Zan^*, Kuo Hsi Yen, Chien Hsun Chen, Pu Kuan Liu, Kuo Hsin Ku, Jennchang Hwang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

RF-ICP sputtered AlN film was used as the gate insulator in pentacene-based organic thin-film transistors (TFTs). With the dielectric breakdown field larger than 5 MVcm and the relative electrical permittivity as 7 in the AlN film, the proposed TFTs exhibit low operation voltage, low subthreshold swing (∼0.4 Vdecade) and high on/off current ratio (> 106). By adjusting the AlN sputtering process, it was found that smooth morphology of AlN film (surface roughness <2 Å) can be obtained by lowering down the process temperature. This atomically smooth dielectric surface leads to the growth of large pentacene grains and improves the leakage current and also the field effect mobility.

Original language	English
Article number	022701ESL
Pages (from-to)	H8-H10
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1149/1.2372227
State	Published - 2007

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abstract = "RF-ICP sputtered AlN film was used as the gate insulator in pentacene-based organic thin-film transistors (TFTs). With the dielectric breakdown field larger than 5 MVcm and the relative electrical permittivity as 7 in the AlN film, the proposed TFTs exhibit low operation voltage, low subthreshold swing (∼0.4 Vdecade) and high on/off current ratio (> 106). By adjusting the AlN sputtering process, it was found that smooth morphology of AlN film (surface roughness <2 {\AA}) can be obtained by lowering down the process temperature. This atomically smooth dielectric surface leads to the growth of large pentacene grains and improves the leakage current and also the field effect mobility.",

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AU - Zan, Hsiao-Wen

AU - Yen, Kuo Hsi

AU - Chen, Chien Hsun

AU - Liu, Pu Kuan

AU - Ku, Kuo Hsin

AU - Hwang, Jennchang

PY - 2007

Y1 - 2007

N2 - RF-ICP sputtered AlN film was used as the gate insulator in pentacene-based organic thin-film transistors (TFTs). With the dielectric breakdown field larger than 5 MVcm and the relative electrical permittivity as 7 in the AlN film, the proposed TFTs exhibit low operation voltage, low subthreshold swing (∼0.4 Vdecade) and high on/off current ratio (> 106). By adjusting the AlN sputtering process, it was found that smooth morphology of AlN film (surface roughness <2 Å) can be obtained by lowering down the process temperature. This atomically smooth dielectric surface leads to the growth of large pentacene grains and improves the leakage current and also the field effect mobility.

AB - RF-ICP sputtered AlN film was used as the gate insulator in pentacene-based organic thin-film transistors (TFTs). With the dielectric breakdown field larger than 5 MVcm and the relative electrical permittivity as 7 in the AlN film, the proposed TFTs exhibit low operation voltage, low subthreshold swing (∼0.4 Vdecade) and high on/off current ratio (> 106). By adjusting the AlN sputtering process, it was found that smooth morphology of AlN film (surface roughness <2 Å) can be obtained by lowering down the process temperature. This atomically smooth dielectric surface leads to the growth of large pentacene grains and improves the leakage current and also the field effect mobility.

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ER -

Organic thin-film transistors with low-temperature AlN film as gate insulator

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