Organic thin-film transistors with AIN film as a gate-insulator by RFIICF sputtering

Kuo Hsi Yen; Hsiao-Wen Zan; Chueh Ping Ko; Pu Kuan Liu; Tzu Yueh Chang; Kuo Hai Su; Chiung Sheng Wei; Po-Tsung Lee; Chien Hsun Chen; Chun Ming Yeh; Jennchang Hwang

Organic thin-film transistors with AIN film as a gate-insulator by RFIICF sputtering

Kuo Hsi Yen^*, Hsiao-Wen Zan, Chueh Ping Ko, Pu Kuan Liu, Tzu Yueh Chang, Kuo Hai Su, Chiung Sheng Wei, Po-Tsung Lee, Chien Hsun Chen, Chun Ming Yeh, Jennchang Hwang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AIN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10^-4 cm ²/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.

Original language	English
Pages (from-to)	56-58
Number of pages	3
Journal	SID Conference Record of the International Display Research Conference
Volume	2005
State	Published - Sep 2005
Event	25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom Duration: 20 Sep 2005 → 22 Sep 2005

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@article{2f6a7275dc944b91afdffba60b3a63c6,

title = "Organic thin-film transistors with AIN film as a gate-insulator by RFIICF sputtering",

abstract = "We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AIN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10-4 cm 2/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.",

author = "Yen, {Kuo Hsi} and Hsiao-Wen Zan and Ko, {Chueh Ping} and Liu, {Pu Kuan} and Chang, {Tzu Yueh} and Su, {Kuo Hai} and Wei, {Chiung Sheng} and Po-Tsung Lee and Chen, {Chien Hsun} and Yeh, {Chun Ming} and Jennchang Hwang",

year = "2005",

month = sep,

language = "English",

volume = "2005",

pages = "56--58",

journal = "SID Conference Record of the International Display Research Conference",

issn = "1083-1312",

publisher = "Society for Information Display",

note = "25th Internatioanl Display Research Conference, EURODISPLAY 2005 ; Conference date: 20-09-2005 Through 22-09-2005",

}

TY - JOUR

T1 - Organic thin-film transistors with AIN film as a gate-insulator by RFIICF sputtering

AU - Yen, Kuo Hsi

AU - Zan, Hsiao-Wen

AU - Ko, Chueh Ping

AU - Liu, Pu Kuan

AU - Chang, Tzu Yueh

AU - Su, Kuo Hai

AU - Wei, Chiung Sheng

AU - Lee, Po-Tsung

AU - Chen, Chien Hsun

AU - Yeh, Chun Ming

AU - Hwang, Jennchang

PY - 2005/9

Y1 - 2005/9

N2 - We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AIN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10-4 cm 2/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.

AB - We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AIN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10-4 cm 2/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.

UR - http://www.scopus.com/inward/record.url?scp=33846610494&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33846610494

SN - 1083-1312

VL - 2005

SP - 56

EP - 58

JO - SID Conference Record of the International Display Research Conference

JF - SID Conference Record of the International Display Research Conference

T2 - 25th Internatioanl Display Research Conference, EURODISPLAY 2005

Y2 - 20 September 2005 through 22 September 2005

ER -

Organic thin-film transistors with AIN film as a gate-insulator by RFIICF sputtering

Abstract

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