Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering

Kuo Hsi Yen*, Hsiao-Wen Zan, Chueh Ping Ko, Pu Kuan Liu, Tzu Yueh Chang, Kuo Hai Su, Chiung Sheng Wei, Po-Tsung Lee, Chien Hsun Chen, Chun Ming Yeh, Jennchang Hwang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10-4 cm 2/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.

Original languageEnglish
Pages56-58
Number of pages3
StatePublished - Oct 2005
EventSecond Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, United States
Duration: 25 Oct 200527 Oct 2005

Conference

ConferenceSecond Americas Display Engineering and Applications Conference, ADEAC 2005
Country/TerritoryUnited States
CityPortland, OR
Period25/10/0527/10/05

Fingerprint

Dive into the research topics of 'Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering'. Together they form a unique fingerprint.

Cite this