Organic photo transistors with drain bias modulation effect

Hsiao-Wen Zan*, Shih Chin Kao

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


In this paper, the influence of light induced electrons on the threshold voltage shift of organic thin film transistors (OTFTs) was studied. The light induced electrons are formed and accumulated in the channel near the interface of gate dielectric. The light source can be used as second source. Therefore, the study demonstrates the light induced electrons in channel can be affected by drain bias like bias stress. The decreasing accumulated electrons with increasing positive drain bias lower the threshold voltage shift rate during illumination time. The opposite trend can be observed when using negative drain increases accumulated electrons. This result is helpful to adjust the photosensivity of organic photo transistors.

Original languageEnglish
Pages (from-to)275-277
Number of pages3
JournalSID Conference Record of the International Display Research Conference
StatePublished - 1 Dec 2008
Event28th International Display Research Conference, IDRC'08 - Orlando, FL, United States
Duration: 4 Nov 20086 Nov 2008


  • Drain-bias modulation
  • Illumination
  • OTFT
  • Stress


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