Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple Quantum Wells

Tsau Hua Hsieh, Wei Ta Huang, Kuo Bin Hong, Tzu Yi Lee, Yi Hong Bai, Yi Hua Pai, Chang Ching Tu, Chun Hui Huang, Yiming Li, Hao Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this research, we compared the performance of commercial μ-LEDs and three-layered staggered QW μ-LED arrays. We also investigated the self-heating effect. We proposed a green micro-resonant cavity light-emitting diode (µ-RCLED) that consists of a three-layer staggered InGaN with multiple quantum wells (MQWs), a bottom layer of nanoporous n-GaN distributed Bragg reflectors (DBRs), and a top layer of Ta2O5/SiO2 DBRs. We systematically performed simulations of the proposed µ-RCLEDs. For the InGaN MQWs with an input current of 300 mA, the calculated wavefunction overlaps are 8.8% and 18.1% for the regular and staggered structures, respectively. Furthermore, the staggered MQWs can reduce the blue-shift of electroluminescence from 10.25 nm, obtained with regular MQWs, to 2.25 nm. Due to less blue-shift, the output power can be maintained even at a high input current. Conversely, by employing 6.5 pairs of Ta2O5/SiO2 DBRs stacks, the full width at half maximum (FWHM) can be significantly reduced from 40 nm, obtained with ordinary µ-LEDs, to 0.3 nm, and a divergence angle smaller than 60° can be obtained. Our simulation results suggest that the µ-RCLEDs can effectively resolve the wavelength instability and color purity issues of conventional µ-LEDs.

Original languageEnglish
Article number572
JournalCrystals
Volume13
Issue number4
DOIs
StatePublished - Apr 2023

Keywords

  • InGaN
  • light-emitting diode
  • micro-LED
  • nanoporous DBR
  • resonant cavity

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