Optoelectronic properties in vertically aligned ZnO/Si-nanopillars

Hsin Yi Lee; Yuan Ming Chang; Wen Shou Tseng; Pin Hsu Kao; Hau Wei Wang; Hung Ming Tai; Leh Rong Chang; Chih Ming Lin; Jenh-Yih Juang

doi:10.1109/NANO.2012.6321889

Optoelectronic properties in vertically aligned ZnO/Si-nanopillars

Hsin Yi Lee^*, Yuan Ming Chang, Wen Shou Tseng, Pin Hsu Kao, Hau Wei Wang, Hung Ming Tai, Leh Rong Chang, Chih Ming Lin, Jenh-Yih Juang

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver nanodots as natural metal-nanomask for subsequent etching process. Ultrathin (9 nm) ZnO films were deposited on the Si-NPs by atomic layer deposition to enhance the field emission property. The turn-on field defined by the 10 μA/cm² current density criterion is 0.74 V/μm with an estimated β 1.33×10 ⁴. The low turn-on field and marked enhancement in β were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs. On the other hand, room-temperature ultraviolet (UV) luminescence was investigated for the atomic layer deposited ZnO films grown on Si nanowires fabricated by self-masking dry etching in hydrogen-containing plasma. For films deposited at 200°C, an intensive UV emission corresponding to free-exciton recombination was observed with a nearly complete suppression of the defect-associated broad visible range emission peak.

Original language	English
Title of host publication	2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs	https://doi.org/10.1109/NANO.2012.6321889
State	Published - 2012
Event	2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom Duration: 20 Aug 2012 → 23 Aug 2012

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Country/Territory	United Kingdom
City	Birmingham
Period	20/08/12 → 23/08/12

Keywords

Atomic layer deposition
Si nanopillars
Ultrathin
ZnO

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10.1109/NANO.2012.6321889

Cite this

Lee, H. Y., Chang, Y. M., Tseng, W. S., Kao, P. H., Wang, H. W., Tai, H. M., Chang, L. R., Lin, C. M., & Juang, J.-Y. (2012). Optoelectronic properties in vertically aligned ZnO/Si-nanopillars. In 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 Article 6321889 (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2012.6321889

@inproceedings{60663188c3bc4433bc504ba645208abe,

title = "Optoelectronic properties in vertically aligned ZnO/Si-nanopillars",

abstract = "An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver nanodots as natural metal-nanomask for subsequent etching process. Ultrathin (9 nm) ZnO films were deposited on the Si-NPs by atomic layer deposition to enhance the field emission property. The turn-on field defined by the 10 μA/cm2 current density criterion is 0.74 V/μm with an estimated β 1.33×10 4. The low turn-on field and marked enhancement in β were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs. On the other hand, room-temperature ultraviolet (UV) luminescence was investigated for the atomic layer deposited ZnO films grown on Si nanowires fabricated by self-masking dry etching in hydrogen-containing plasma. For films deposited at 200°C, an intensive UV emission corresponding to free-exciton recombination was observed with a nearly complete suppression of the defect-associated broad visible range emission peak.",

keywords = "Atomic layer deposition, Si nanopillars, Ultrathin, ZnO",

author = "Lee, {Hsin Yi} and Chang, {Yuan Ming} and Tseng, {Wen Shou} and Kao, {Pin Hsu} and Wang, {Hau Wei} and Tai, {Hung Ming} and Chang, {Leh Rong} and Lin, {Chih Ming} and Jenh-Yih Juang",

year = "2012",

doi = "10.1109/NANO.2012.6321889",

language = "English",

isbn = "9781467321983",

series = "Proceedings of the IEEE Conference on Nanotechnology",

booktitle = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012",

note = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012 ; Conference date: 20-08-2012 Through 23-08-2012",

}

Lee, HY, Chang, YM, Tseng, WS, Kao, PH, Wang, HW, Tai, HM, Chang, LR, Lin, CM & Juang, J-Y 2012, Optoelectronic properties in vertically aligned ZnO/Si-nanopillars. in 2012 12th IEEE International Conference on Nanotechnology, NANO 2012., 6321889, Proceedings of the IEEE Conference on Nanotechnology, 2012 12th IEEE International Conference on Nanotechnology, NANO 2012, Birmingham, United Kingdom, 20/08/12. https://doi.org/10.1109/NANO.2012.6321889

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T1 - Optoelectronic properties in vertically aligned ZnO/Si-nanopillars

AU - Lee, Hsin Yi

AU - Chang, Yuan Ming

AU - Tseng, Wen Shou

AU - Kao, Pin Hsu

AU - Wang, Hau Wei

AU - Tai, Hung Ming

AU - Chang, Leh Rong

AU - Lin, Chih Ming

AU - Juang, Jenh-Yih

PY - 2012

Y1 - 2012

N2 - An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver nanodots as natural metal-nanomask for subsequent etching process. Ultrathin (9 nm) ZnO films were deposited on the Si-NPs by atomic layer deposition to enhance the field emission property. The turn-on field defined by the 10 μA/cm2 current density criterion is 0.74 V/μm with an estimated β 1.33×10 4. The low turn-on field and marked enhancement in β were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs. On the other hand, room-temperature ultraviolet (UV) luminescence was investigated for the atomic layer deposited ZnO films grown on Si nanowires fabricated by self-masking dry etching in hydrogen-containing plasma. For films deposited at 200°C, an intensive UV emission corresponding to free-exciton recombination was observed with a nearly complete suppression of the defect-associated broad visible range emission peak.

AB - An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver nanodots as natural metal-nanomask for subsequent etching process. Ultrathin (9 nm) ZnO films were deposited on the Si-NPs by atomic layer deposition to enhance the field emission property. The turn-on field defined by the 10 μA/cm2 current density criterion is 0.74 V/μm with an estimated β 1.33×10 4. The low turn-on field and marked enhancement in β were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs. On the other hand, room-temperature ultraviolet (UV) luminescence was investigated for the atomic layer deposited ZnO films grown on Si nanowires fabricated by self-masking dry etching in hydrogen-containing plasma. For films deposited at 200°C, an intensive UV emission corresponding to free-exciton recombination was observed with a nearly complete suppression of the defect-associated broad visible range emission peak.

KW - Atomic layer deposition

KW - Si nanopillars

KW - Ultrathin

KW - ZnO

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U2 - 10.1109/NANO.2012.6321889

DO - 10.1109/NANO.2012.6321889

M3 - Conference contribution

AN - SCOPUS:84869161965

SN - 9781467321983

T3 - Proceedings of the IEEE Conference on Nanotechnology

BT - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012

T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012

Y2 - 20 August 2012 through 23 August 2012

ER -

Optoelectronic properties in vertically aligned ZnO/Si-nanopillars

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