The epitaxial layer resistance of a MOSFET can be slightly reduced by using an optimum doping profile, which exhibits a minimum in the upper half of the layer when the layer thickness is large compared to the cell-to-cell spacing. A gradual transition from the n epitaxial layer to the n+ substrate is desirable. When current spreading is significant, the resistance may rise as [Formula omitted] rather than [Formula omitted].
|Number of pages||3|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - 1 Jan 1982|