Optimum Doping Profile of Power MOSFET Epitaxial Layer

Xing Bi Chen; Xing Bi Chen; Chen-Ming Hu

doi:10.1109/T-ED.1982.20818

Optimum Doping Profile of Power MOSFET Epitaxial Layer

Xing Bi Chen, Xing Bi Chen, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The epitaxial layer resistance of a MOSFET can be slightly reduced by using an optimum doping profile, which exhibits a minimum in the upper half of the layer when the layer thickness is large compared to the cell-to-cell spacing. A gradual transition from the n epitaxial layer to the n+ substrate is desirable. When current spreading is significant, the resistance may rise as [Formula omitted] rather than [Formula omitted].

Original language	English
Pages (from-to)	985-987
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	29
Issue number	6
DOIs	https://doi.org/10.1109/T-ED.1982.20818
State	Published - 1 Jan 1982

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Optimum Doping Profile of Power MOSFET Epitaxial Layer

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