Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage

Chen-Ming Hu

doi:10.1109/T-ED.1979.19416

Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage

Chen-Ming Hu^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

The optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. The theory applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors. The minimum series resistance is found to be about 3.7 × 10–9 V 2.6B Ω • cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+ structure.

Original language	English
Pages (from-to)	243-244
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/T-ED.1979.19416
State	Published - 1 Jan 1979

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Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage

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