The optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. The theory applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors. The minimum series resistance is found to be about 3.7 × 10–9 V 2.6B Ω • cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+ structure.
|Number of pages||2|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - 1 Jan 1979|