Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology

Tung Ming Pan; Tan Fu Lei; Tien-Sheng Chao; Ming Chi Liaw; Chih Peng Lu

doi:10.1143/JJAP.39.5805

Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology

Tung Ming Pan, Tan Fu Lei, Tien-Sheng Chao, Ming Chi Liaw, Chih Peng Lu

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A novel one-step cleaning method has been developed for pre-gate-oxide cleaning to replace the conventional RCA two-step cleaning process. Tetramethyl ammonium hydroxide (TMAH) and ethylenediamine tetraacetic acid (EDTA) are added into the RCA SC-1 cleaning solution to enhance cleaning efficiency. We adapt a robust design methodology (Genichi Taguchi method) to analyze the results of our experiments. Using this novel method, it is found that the optimum conditions are A₁B₂C₁D₁ (A₁: TMAH:NH₄OH = 1:50, B₂: EDTA concentration is 100 ppm, C₁: cleaning time is 5 min, and D₁: cleaning temperature is 60°C). This novel one-step cleaning method is very promising for future large-sized silicon wafer cleaning processes because it has the advantages of reduced processing time and temperature, cost reduction due to reduced chemical usage and improved performance.

Original language	English
Pages (from-to)	5805-5808
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.39.5805
State	Published - Oct 2000

Access to Document

10.1143/JJAP.39.5805

Cite this

@article{dcd532180432447b89dda53ddbbdadd7,

title = "Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology",

abstract = "A novel one-step cleaning method has been developed for pre-gate-oxide cleaning to replace the conventional RCA two-step cleaning process. Tetramethyl ammonium hydroxide (TMAH) and ethylenediamine tetraacetic acid (EDTA) are added into the RCA SC-1 cleaning solution to enhance cleaning efficiency. We adapt a robust design methodology (Genichi Taguchi method) to analyze the results of our experiments. Using this novel method, it is found that the optimum conditions are A1B2C1D1 (A1: TMAH:NH4OH = 1:50, B2: EDTA concentration is 100 ppm, C1: cleaning time is 5 min, and D1: cleaning temperature is 60°C). This novel one-step cleaning method is very promising for future large-sized silicon wafer cleaning processes because it has the advantages of reduced processing time and temperature, cost reduction due to reduced chemical usage and improved performance.",

author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Tien-Sheng Chao and Liaw, {Ming Chi} and Lu, {Chih Peng}",

year = "2000",

month = oct,

doi = "10.1143/JJAP.39.5805",

language = "English",

volume = "39",

pages = "5805--5808",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology. / Pan, Tung Ming; Lei, Tan Fu; Chao, Tien-Sheng et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 10, 10.2000, p. 5805-5808.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology

AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

AU - Liaw, Ming Chi

AU - Lu, Chih Peng

PY - 2000/10

Y1 - 2000/10

N2 - A novel one-step cleaning method has been developed for pre-gate-oxide cleaning to replace the conventional RCA two-step cleaning process. Tetramethyl ammonium hydroxide (TMAH) and ethylenediamine tetraacetic acid (EDTA) are added into the RCA SC-1 cleaning solution to enhance cleaning efficiency. We adapt a robust design methodology (Genichi Taguchi method) to analyze the results of our experiments. Using this novel method, it is found that the optimum conditions are A1B2C1D1 (A1: TMAH:NH4OH = 1:50, B2: EDTA concentration is 100 ppm, C1: cleaning time is 5 min, and D1: cleaning temperature is 60°C). This novel one-step cleaning method is very promising for future large-sized silicon wafer cleaning processes because it has the advantages of reduced processing time and temperature, cost reduction due to reduced chemical usage and improved performance.

AB - A novel one-step cleaning method has been developed for pre-gate-oxide cleaning to replace the conventional RCA two-step cleaning process. Tetramethyl ammonium hydroxide (TMAH) and ethylenediamine tetraacetic acid (EDTA) are added into the RCA SC-1 cleaning solution to enhance cleaning efficiency. We adapt a robust design methodology (Genichi Taguchi method) to analyze the results of our experiments. Using this novel method, it is found that the optimum conditions are A1B2C1D1 (A1: TMAH:NH4OH = 1:50, B2: EDTA concentration is 100 ppm, C1: cleaning time is 5 min, and D1: cleaning temperature is 60°C). This novel one-step cleaning method is very promising for future large-sized silicon wafer cleaning processes because it has the advantages of reduced processing time and temperature, cost reduction due to reduced chemical usage and improved performance.

UR - http://www.scopus.com/inward/record.url?scp=0034290812&partnerID=8YFLogxK

U2 - 10.1143/JJAP.39.5805

DO - 10.1143/JJAP.39.5805

M3 - Article

AN - SCOPUS:0034290812

SN - 0021-4922

VL - 39

SP - 5805

EP - 5808

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10

ER -

Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology

Abstract

Access to Document

Other files and links

Fingerprint

Cite this