Optimizing the Ferroelectric Properties of Hf1-xZrxO2 Films via Crystal Orientation

Chih Yu Teng, Chia Chieh Cheng, Kai Shin Li, Chenming Hu, Jhih Min Lin, Bi Hsuan Lin, Mau Tsu Tang, Yuan Chieh Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


This study exploits the coupling of crystallographic and ferroelectric (FE) properties in an effort to enhance the FE performance of Hf1-xZrxO2 (HZO). The proposed scheme involved optimizing the orientation of orthorhombic (O)-phase crystals along the preferred polarization axis by applying an electric pulse during annealing. The proposed electric pulse annealing (EPA) process reduced the need for wake-up treatment; however, it imposed limited changes on the amount of the O-phase and leakage performance, compared with rapid thermal annealing (RTA). Excessively high EPA doses induced an O → M (monoclinic) phase transformation, which sacrificed FE polarization but preserved the wake-up-free-like properties. Our results demonstrate that optimizing the orientation of polycrystalline O-phase may be as important as maximizing the quantity of O-phase for HZO applications.

Original languageEnglish
Pages (from-to)1114-1122
Number of pages9
JournalACS Applied Electronic Materials
Issue number2
StatePublished - 28 Feb 2023


  • HfZrO
  • ferroelectric
  • ferroelectric wake-up
  • orientation
  • orthorhombic


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