TY - JOUR
T1 - Optimization on MOS-triggered SCR structures for On-Chip ESD protection
AU - Chen, Shih Hung
AU - Ker, Ming-Dou
PY - 2009
Y1 - 2009
N2 - MOS-triggered silicon-controlled rectifier (SCR) devices have been reported to achieve efficient on-chip electrostatic discharge (ESD) protection in deep-submicrometer CMOS technology. The channel length of the embedded MOS transistor in the MOS-triggered SCR device dominates the trigger mechanism and current distribution to govern the trigger voltage, holding voltage, on resistance, second breakdown current, and ESD robustness of the MOS-triggered SCR device. The embedded MOS transistor in the MOS-triggered SCR device should be optimized to achieve the most efficient ESD protection in advanced CMOS technology. In addition, the layout style of the embedded MOS transistor can be adjusted to improve the MOS-triggered SCR device for ESD protection.
AB - MOS-triggered silicon-controlled rectifier (SCR) devices have been reported to achieve efficient on-chip electrostatic discharge (ESD) protection in deep-submicrometer CMOS technology. The channel length of the embedded MOS transistor in the MOS-triggered SCR device dominates the trigger mechanism and current distribution to govern the trigger voltage, holding voltage, on resistance, second breakdown current, and ESD robustness of the MOS-triggered SCR device. The embedded MOS transistor in the MOS-triggered SCR device should be optimized to achieve the most efficient ESD protection in advanced CMOS technology. In addition, the layout style of the embedded MOS transistor can be adjusted to improve the MOS-triggered SCR device for ESD protection.
KW - ESD protection
KW - Electrostatic discharge (ESD)
KW - Silicon-controlled rectifiers (SCRs)
UR - http://www.scopus.com/inward/record.url?scp=67650125208&partnerID=8YFLogxK
U2 - 10.1109/TED.2009.2021359
DO - 10.1109/TED.2009.2021359
M3 - Article
AN - SCOPUS:67650125208
SN - 0018-9383
VL - 56
SP - 1466
EP - 1472
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 7
ER -