Optimization on configuration of surface conduction electron-emitters

Hui Wen Cheng; Yiming Li

doi:10.1016/j.microrel.2010.01.011

Optimization on configuration of surface conduction electron-emitters

Hui Wen Cheng, Yiming Li^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this work, a novel nanogap with inclined protrusion cathode in palladium strip fabricated by hydrogen absorption under high-pressure treatment is optimized for the surface conduction electron-emitter. Its field emission is sensitive to the geometry of surface conduction electron-emitters (SCE). For a specified emitter material, the SCE are further investigated by varying the thickness, tilted angle and gap of palladium (Pd). An optimal field emission efficiency with 80° tilted angle, 120 nm gap and 10 nm thickness of Pd is found for certain designed field emission efficiency. We further find that varying the emitter material work function of the emitter material from 5.12 eV to 3.9 eV will further improve the field emission property due to the increase of the emitted current.

Original language	English
Pages (from-to)	699-703
Number of pages	5
Journal	Microelectronics Reliability
Volume	50
Issue number	5
DOIs	https://doi.org/10.1016/j.microrel.2010.01.011
State	Published - May 2010

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10.1016/j.microrel.2010.01.011

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@article{71a8e9bdcfa7467eab25f62ac87e0d65,

title = "Optimization on configuration of surface conduction electron-emitters",

abstract = "In this work, a novel nanogap with inclined protrusion cathode in palladium strip fabricated by hydrogen absorption under high-pressure treatment is optimized for the surface conduction electron-emitter. Its field emission is sensitive to the geometry of surface conduction electron-emitters (SCE). For a specified emitter material, the SCE are further investigated by varying the thickness, tilted angle and gap of palladium (Pd). An optimal field emission efficiency with 80° tilted angle, 120 nm gap and 10 nm thickness of Pd is found for certain designed field emission efficiency. We further find that varying the emitter material work function of the emitter material from 5.12 eV to 3.9 eV will further improve the field emission property due to the increase of the emitted current.",

author = "Cheng, {Hui Wen} and Yiming Li",

year = "2010",

month = may,

doi = "10.1016/j.microrel.2010.01.011",

language = "English",

volume = "50",

pages = "699--703",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "5",

}

TY - JOUR

T1 - Optimization on configuration of surface conduction electron-emitters

AU - Cheng, Hui Wen

AU - Li, Yiming

PY - 2010/5

Y1 - 2010/5

N2 - In this work, a novel nanogap with inclined protrusion cathode in palladium strip fabricated by hydrogen absorption under high-pressure treatment is optimized for the surface conduction electron-emitter. Its field emission is sensitive to the geometry of surface conduction electron-emitters (SCE). For a specified emitter material, the SCE are further investigated by varying the thickness, tilted angle and gap of palladium (Pd). An optimal field emission efficiency with 80° tilted angle, 120 nm gap and 10 nm thickness of Pd is found for certain designed field emission efficiency. We further find that varying the emitter material work function of the emitter material from 5.12 eV to 3.9 eV will further improve the field emission property due to the increase of the emitted current.

AB - In this work, a novel nanogap with inclined protrusion cathode in palladium strip fabricated by hydrogen absorption under high-pressure treatment is optimized for the surface conduction electron-emitter. Its field emission is sensitive to the geometry of surface conduction electron-emitters (SCE). For a specified emitter material, the SCE are further investigated by varying the thickness, tilted angle and gap of palladium (Pd). An optimal field emission efficiency with 80° tilted angle, 120 nm gap and 10 nm thickness of Pd is found for certain designed field emission efficiency. We further find that varying the emitter material work function of the emitter material from 5.12 eV to 3.9 eV will further improve the field emission property due to the increase of the emitted current.

UR - http://www.scopus.com/inward/record.url?scp=77953133371&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2010.01.011

DO - 10.1016/j.microrel.2010.01.011

M3 - Article

AN - SCOPUS:77953133371

SN - 0026-2714

VL - 50

SP - 699

EP - 703

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 5

ER -

Optimization on configuration of surface conduction electron-emitters

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