Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

Y. K. Su*, W. C. Chen, C. T. Wan, Hsin-Chieh Yu, R. W. Chuang, M. C. Tsai, K. Y. Cheng, C. Hu, Seth Tsau

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In 0.39 Ga 0.61 As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm 2 . To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm 2 . The fitted characteristic temperature (T 0 ) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In 0.42 Ga 0.58 As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.

Original languageEnglish
Pages (from-to)3615-3620
Number of pages6
JournalJournal of Crystal Growth
Issue number15
StatePublished - 15 Jul 2008


  • A1. Characterization
  • A3. Metalorganic vapor phase epitaxy
  • A3. Quantum wells
  • B3. Laser diodes


Dive into the research topics of 'Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE'. Together they form a unique fingerprint.

Cite this