Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD

Q. Yang; Q. J. Hartmann; A. P. Curtis; Chun-Hsiung Lin; D. A. Ahmari; D. Scott; Hao-Chung Kuo; Haydn Chen; G. E. Stillman

doi:10.1109/ISCS.1998.711571

Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD

Q. Yang, Q. J. Hartmann, A. P. Curtis, Chun-Hsiung Lin, D. A. Ahmari, D. Scott, Hao-Chung Kuo, Haydn Chen, G. E. Stillman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We studied the effect of group V switching times on the formation of interfacial layers in InGaP/GaAs heterostructures grown by LP-MOCVD using low temperature photoluminescence (PL), double crystal X-ray diffraction (DCXRD) and high resolution transmission electron microscopy (HRTEM). Due to the severe substitution process of P by As, the quality of InGaP-to-GaAs interface was very sensitive to switching times. By optimizing the switching conditions, we were able to minimize the interfacial layers to one monolayer (ML) of In_0.5Ga_0.5As at the GaAs-to-InGaP interface and 1 ML of In_0.65Ga_0.15P_0.15As_0.85 at the InGaP-to-GaAs interface. Heterojunction bipolar transistors (HBTs) grown using this switching scheme showed excellent etch selectivity as well as dc characteristics.

Original language	English
Title of host publication	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Editors	Mike Melloch, Mark A. Reed
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	95-98
Number of pages	4
ISBN (Print)	0780338839, 9780780338838
DOIs	https://doi.org/10.1109/ISCS.1998.711571
State	Published - 1997
Event	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States Duration: 8 Sep 1997 → 11 Sep 1997

Publication series

Name	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Conference

Conference	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country/Territory	United States
City	San Diego
Period	8/09/97 → 11/09/97

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10.1109/ISCS.1998.711571

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Yang, Q., Hartmann, Q. J., Curtis, A. P., Lin, C.-H., Ahmari, D. A., Scott, D., Kuo, H.-C., Chen, H., & Stillman, G. E. (1997). Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 95-98). Article 711571 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711571

Yang, Q. ; Hartmann, Q. J. ; Curtis, A. P. et al. / Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 95-98 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

@inproceedings{251d25dd2f644393898c5705c6b17e2d,

title = "Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD",

abstract = "We studied the effect of group V switching times on the formation of interfacial layers in InGaP/GaAs heterostructures grown by LP-MOCVD using low temperature photoluminescence (PL), double crystal X-ray diffraction (DCXRD) and high resolution transmission electron microscopy (HRTEM). Due to the severe substitution process of P by As, the quality of InGaP-to-GaAs interface was very sensitive to switching times. By optimizing the switching conditions, we were able to minimize the interfacial layers to one monolayer (ML) of In0.5Ga0.5As at the GaAs-to-InGaP interface and 1 ML of In0.65Ga0.15P0.15As0.85 at the InGaP-to-GaAs interface. Heterojunction bipolar transistors (HBTs) grown using this switching scheme showed excellent etch selectivity as well as dc characteristics.",

author = "Q. Yang and Hartmann, {Q. J.} and Curtis, {A. P.} and Chun-Hsiung Lin and Ahmari, {D. A.} and D. Scott and Hao-Chung Kuo and Haydn Chen and Stillman, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",

year = "1997",

doi = "10.1109/ISCS.1998.711571",

language = "English",

isbn = "0780338839",

series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "95--98",

editor = "Mike Melloch and Reed, {Mark A.}",

booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

address = "United States",

}

Yang, Q, Hartmann, QJ, Curtis, AP, Lin, C-H, Ahmari, DA, Scott, D, Kuo, H-C, Chen, H & Stillman, GE 1997, Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711571, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 95-98, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 8/09/97. https://doi.org/10.1109/ISCS.1998.711571

Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD. / Yang, Q.; Hartmann, Q. J.; Curtis, A. P. et al.
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 95-98 711571 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD

AU - Yang, Q.

AU - Hartmann, Q. J.

AU - Curtis, A. P.

AU - Lin, Chun-Hsiung

AU - Ahmari, D. A.

AU - Scott, D.

AU - Kuo, Hao-Chung

AU - Chen, Haydn

AU - Stillman, G. E.

PY - 1997

Y1 - 1997

N2 - We studied the effect of group V switching times on the formation of interfacial layers in InGaP/GaAs heterostructures grown by LP-MOCVD using low temperature photoluminescence (PL), double crystal X-ray diffraction (DCXRD) and high resolution transmission electron microscopy (HRTEM). Due to the severe substitution process of P by As, the quality of InGaP-to-GaAs interface was very sensitive to switching times. By optimizing the switching conditions, we were able to minimize the interfacial layers to one monolayer (ML) of In0.5Ga0.5As at the GaAs-to-InGaP interface and 1 ML of In0.65Ga0.15P0.15As0.85 at the InGaP-to-GaAs interface. Heterojunction bipolar transistors (HBTs) grown using this switching scheme showed excellent etch selectivity as well as dc characteristics.

AB - We studied the effect of group V switching times on the formation of interfacial layers in InGaP/GaAs heterostructures grown by LP-MOCVD using low temperature photoluminescence (PL), double crystal X-ray diffraction (DCXRD) and high resolution transmission electron microscopy (HRTEM). Due to the severe substitution process of P by As, the quality of InGaP-to-GaAs interface was very sensitive to switching times. By optimizing the switching conditions, we were able to minimize the interfacial layers to one monolayer (ML) of In0.5Ga0.5As at the GaAs-to-InGaP interface and 1 ML of In0.65Ga0.15P0.15As0.85 at the InGaP-to-GaAs interface. Heterojunction bipolar transistors (HBTs) grown using this switching scheme showed excellent etch selectivity as well as dc characteristics.

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U2 - 10.1109/ISCS.1998.711571

DO - 10.1109/ISCS.1998.711571

M3 - Conference contribution

AN - SCOPUS:57449084182

SN - 0780338839

SN - 9780780338838

T3 - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

SP - 95

EP - 98

BT - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

A2 - Melloch, Mike

A2 - Reed, Mark A.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997

Y2 - 8 September 1997 through 11 September 1997

ER -

Yang Q, Hartmann QJ, Curtis AP, Lin CH, Ahmari DA, Scott D et al. Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 95-98. 711571. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). doi: 10.1109/ISCS.1998.711571

Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD

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