Optimization of Ferroelectricity in Al-Doped HfO2Capacitors: Electrical and Endurance Characteristics

Dong Ru Hsieh, Huai En Luo, Jia Chian Ni, Zi Yang Hong, Yi Hsiu Chen, Wei Ju Yeh, Tien Sheng Chao*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Al-doped HfO2 (HAO) capacitors were successfully fabricated and their electrical and endurance characteristics were investigated and discussed to optimize the Al content. We found that the 3.8 % HAO capacitors can sustain a high post-metal annealing (PMA) temperature and exhibit a largest polarization. After 106 cycles, the 3.8 % HAO capacitors show a larger memory window (MW) and superior voltage stress immunity. Therefore, these 3.8 % HAO capacitors are promising candidates for storage class memory (SCM) applications.

Original languageEnglish
Title of host publication2023 Silicon Nanoelectronics Workshop, SNW 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages49-50
Number of pages2
ISBN (Electronic)9784863488083
DOIs
StatePublished - 2023
Event26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
Duration: 11 Jun 202312 Jun 2023

Publication series

Name2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference26th Silicon Nanoelectronics Workshop, SNW 2023
Country/TerritoryJapan
CityKyoto
Period11/06/2312/06/23

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