Abstract
From this research, we report on the performances of Cu(In,Ga) Se 2 (CIGS) thin film solar cells device simulation of the carrier concentration and thickness of CdS buffer layer which were respectively varied from 1012 to 1020 cm-3 and 10 nm to 100 nm, to find out an optimum thickness of around 40-50 nm of high-efficiency CdS buffer layer, the optimum of carrier concentration is found to be 1017 cm-3 revealed the best efficiency of 18.20%.
Original language | English |
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Pages | 1532-1534 |
Number of pages | 3 |
State | Published - 30 Aug 2011 |
Event | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia Duration: 28 Aug 2011 → 1 Sep 2011 |
Conference
Conference | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 |
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Country/Territory | Australia |
City | Sydney |
Period | 28/08/11 → 1/09/11 |