Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs

Narasimhulu Thoti, Yi-Ming Li*, Sekhar Reddy Kola, Seiji Samukawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (LOV). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and LOV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si0.6Ge0.4. The optimal values of IGS and LOV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a LOV ≈ LG/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and Ion/Ioff = 109 are achieved.

Original languageEnglish
Article number2998939
Pages (from-to)38-46
Number of pages9
JournalIEEE Open Journal of Nanotechnology
StatePublished - 2020


  • Device Simulation
  • Electrical characteristics
  • Inter-gate separation
  • Multi-channel line tunnel field effect transistors
  • Physical quantities
  • SiGe
  • Source overlap
  • Tunneling Models


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