Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics

Ming Hao Kuo; Meng Chun Lee; Che Wei Tien; Wei Ting Lai; Pei-Wen Li

doi:10.1364/OFC.2017.W2A.7

Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics

Ming Hao Kuo, Meng Chun Lee, Che Wei Tien, Wei Ting Lai, Pei-Wen Li^*

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ge-dot/SiO₂/SiGe-channel photoMOSFETs are demonstrated on Si substrate. A decrease in the dot size and gate oxide thickness significantly enhances the photoresponsivity (9000A/W) with 6nW under 850nm illumination, and improves response time (0.48ns) and power consumption.

Original language	English
Title of host publication	2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580231
DOIs	https://doi.org/10.1364/OFC.2017.W2A.7
State	Published - 31 May 2017
Event	2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Los Angeles, United States Duration: 19 Mar 2017 → 23 Mar 2017

Publication series

Name	2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings

Conference

Conference	2017 Optical Fiber Communications Conference and Exhibition, OFC 2017
Country/Territory	United States
City	Los Angeles
Period	19/03/17 → 23/03/17

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10.1364/OFC.2017.W2A.7

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Kuo, M. H., Lee, M. C., Tien, C. W., Lai, W. T., & Li, P.-W. (2017). Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics. In 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings Article 7937406 (2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/OFC.2017.W2A.7

Kuo, Ming Hao ; Lee, Meng Chun ; Tien, Che Wei et al. / Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics. 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. (2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings).

@inproceedings{f585d27e0bf1418ba59638eda122e130,

title = "Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics",

abstract = "Ge-dot/SiO2/SiGe-channel photoMOSFETs are demonstrated on Si substrate. A decrease in the dot size and gate oxide thickness significantly enhances the photoresponsivity (9000A/W) with 6nW under 850nm illumination, and improves response time (0.48ns) and power consumption.",

author = "Kuo, {Ming Hao} and Lee, {Meng Chun} and Tien, {Che Wei} and Lai, {Wei Ting} and Pei-Wen Li",

year = "2017",

month = may,

day = "31",

doi = "10.1364/OFC.2017.W2A.7",

language = "English",

series = "2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings",

address = "美國",

note = "2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 ; Conference date: 19-03-2017 Through 23-03-2017",

}

Kuo, MH, Lee, MC, Tien, CW, Lai, WT & Li, P-W 2017, Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics. in 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings., 7937406, 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017, Los Angeles, United States, 19/03/17. https://doi.org/10.1364/OFC.2017.W2A.7

Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics. / Kuo, Ming Hao; Lee, Meng Chun; Tien, Che Wei et al.
2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 7937406 (2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics

AU - Kuo, Ming Hao

AU - Lee, Meng Chun

AU - Tien, Che Wei

AU - Lai, Wei Ting

AU - Li, Pei-Wen

PY - 2017/5/31

Y1 - 2017/5/31

N2 - Ge-dot/SiO2/SiGe-channel photoMOSFETs are demonstrated on Si substrate. A decrease in the dot size and gate oxide thickness significantly enhances the photoresponsivity (9000A/W) with 6nW under 850nm illumination, and improves response time (0.48ns) and power consumption.

AB - Ge-dot/SiO2/SiGe-channel photoMOSFETs are demonstrated on Si substrate. A decrease in the dot size and gate oxide thickness significantly enhances the photoresponsivity (9000A/W) with 6nW under 850nm illumination, and improves response time (0.48ns) and power consumption.

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AN - SCOPUS:85025803570

T3 - 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings

BT - 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017

Y2 - 19 March 2017 through 23 March 2017

ER -

Kuo MH, Lee MC, Tien CW, Lai WT, Li PW. Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics. In 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. 7937406. (2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings). doi: 10.1364/OFC.2017.W2A.7

Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics

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