Optically pumped GaN-based vertical cavity surface emitting lasers: Technology and characteristics

Shing Chung Wang*, Tien-chang Lu, Chih Chiang Kao, Jong Tang Chu, Gen Sheng Huang, Hao-Chung Kuo, Shih Wei Chen, Tsung Ting Kao, Jun Rong Chen, Li Fan Lin

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

41 Scopus citations


We review the fabrication technology and performance characteristics of optically pumped GaN-based vertical cavity surface emitting lasers (VCSELs). Two types of VCSELs with different microcavity structures are described. First type of VCSEL has a hybrid microcavity structure that consists of an epitaxially grown AlN/GaN distributed Bragg reflector (DBR), a GaN active layer with InGaN/GaN multiple quantum wells (MQWs), and a Ta2O 5/SiO2 dielectric DBR. Second type of VCSEL has a dielectric DBR microcavity structure that has a similar InGaN/GaN MQWs active layer sandwiched in two dielectric DBRs formed by Ta2O 5/SiO2 and TiO2/SiO2. Both types of VCSELs achieved laser action under optical pumping at room temperature with emission wavelength of 448 and 414 nm for hybrid DBR VCSEL and dielectric DBR VCSEL, respectively. Both lasers showed narrow emission linewidth with high degree of polarization and large spontaneous emission coupling factors of about 10-2. In addition, a high characteristic temperature of over 240K was measured, and a distinct spatially inhomogeneous emission pattern was observed.

Original languageEnglish
Pages (from-to)5397-5407
Number of pages11
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number8S
StatePublished - 23 Aug 2007


  • DBR
  • GaN
  • Laser lift-off
  • Vertical cavity surface emitting laser


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