Optical simulation and fabrication of near-ultraviolet LEDs on a roughened backside GaN substrate

Yi Keng Fu; Yu Hsuan Lu; Rong Xuan; Chia Hsin Chao; Yan Kuin Su; Jenn-Fang Chen

doi:10.1109/LPT.2011.2182606

Optical simulation and fabrication of near-ultraviolet LEDs on a roughened backside GaN substrate

Yi Keng Fu^*, Yu Hsuan Lu, Rong Xuan, Chia Hsin Chao, Yan Kuin Su, Jenn-Fang Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this letter, the numerical and experimental demonstrations for enhancement of light extraction efficiency in near-ultraviolet light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate through a chemical wet-etching process are investigated. It was also found that the increased etching time can increase the height of hexagonal pyramids and decrease the density of hexagonal pyramids. With 20-mA injection current, it was found that forward voltages were 3.13 and 3.16 V while output powers were 13.15 and 27.18 mW for the conventional LED and roughened backside LED, respectively.

Original language	English
Article number	6122049
Pages (from-to)	488-490
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2011.2182606
State	Published - 7 Mar 2012

Keywords

Chemical wet-etching
GaN
Light extraction
Near-ultraviolet light-emitting diode (NUV LED)
Simulation

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10.1109/LPT.2011.2182606

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@article{6bbe00a1079a4523b0d219ac7d4f63cc,

title = "Optical simulation and fabrication of near-ultraviolet LEDs on a roughened backside GaN substrate",

abstract = "In this letter, the numerical and experimental demonstrations for enhancement of light extraction efficiency in near-ultraviolet light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate through a chemical wet-etching process are investigated. It was also found that the increased etching time can increase the height of hexagonal pyramids and decrease the density of hexagonal pyramids. With 20-mA injection current, it was found that forward voltages were 3.13 and 3.16 V while output powers were 13.15 and 27.18 mW for the conventional LED and roughened backside LED, respectively.",

keywords = "Chemical wet-etching, GaN, Light extraction, Near-ultraviolet light-emitting diode (NUV LED), Simulation",

author = "Fu, {Yi Keng} and Lu, {Yu Hsuan} and Rong Xuan and Chao, {Chia Hsin} and Su, {Yan Kuin} and Jenn-Fang Chen",

year = "2012",

month = mar,

day = "7",

doi = "10.1109/LPT.2011.2182606",

language = "English",

volume = "24",

pages = "488--490",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Optical simulation and fabrication of near-ultraviolet LEDs on a roughened backside GaN substrate

AU - Fu, Yi Keng

AU - Lu, Yu Hsuan

AU - Xuan, Rong

AU - Chao, Chia Hsin

AU - Su, Yan Kuin

AU - Chen, Jenn-Fang

PY - 2012/3/7

Y1 - 2012/3/7

N2 - In this letter, the numerical and experimental demonstrations for enhancement of light extraction efficiency in near-ultraviolet light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate through a chemical wet-etching process are investigated. It was also found that the increased etching time can increase the height of hexagonal pyramids and decrease the density of hexagonal pyramids. With 20-mA injection current, it was found that forward voltages were 3.13 and 3.16 V while output powers were 13.15 and 27.18 mW for the conventional LED and roughened backside LED, respectively.

AB - In this letter, the numerical and experimental demonstrations for enhancement of light extraction efficiency in near-ultraviolet light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate through a chemical wet-etching process are investigated. It was also found that the increased etching time can increase the height of hexagonal pyramids and decrease the density of hexagonal pyramids. With 20-mA injection current, it was found that forward voltages were 3.13 and 3.16 V while output powers were 13.15 and 27.18 mW for the conventional LED and roughened backside LED, respectively.

KW - Chemical wet-etching

KW - GaN

KW - Light extraction

KW - Near-ultraviolet light-emitting diode (NUV LED)

KW - Simulation

UR - http://www.scopus.com/inward/record.url?scp=84863271459&partnerID=8YFLogxK

U2 - 10.1109/LPT.2011.2182606

DO - 10.1109/LPT.2011.2182606

M3 - Article

AN - SCOPUS:84863271459

SN - 1041-1135

VL - 24

SP - 488

EP - 490

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 6

M1 - 6122049

ER -

Optical simulation and fabrication of near-ultraviolet LEDs on a roughened backside GaN substrate

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