Optical properties of Zn1-xCdxSe epilayers grown on (100) GaAs by molecular beam epitaxy

Ming Chin Kuo; Kuan Cheng Chiu; Tsai Hsuai Shih; Yi Jen Lai; Chu Shou Yang; Wei-Kuo Chen; Der San Chuu; Ming Chih Lee; Wu-Ching Chou; Syang Ywan Jeng; Yu Tai Shih; Wen Ho Lan

doi:10.1143/JJAP.43.5145

Optical properties of Zn_1-xCd_xSe epilayers grown on (100) GaAs by molecular beam epitaxy

Ming Chin Kuo, Kuan Cheng Chiu, Tsai Hsuai Shih, Yi Jen Lai, Chu Shou Yang, Wei-Kuo Chen, Der San Chuu, Ming Chih Lee, Wu-Ching Chou^*, Syang Ywan Jeng, Yu Tai Shih, Wen Ho Lan

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Zn_1-xCd_xSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161K to 368 K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by ΓT(T) = Γ₀ + Γ + Γ_aT + Γ_Lo1/ [exp(ℏω_Lo1/kT)-1]+Γ_Lo2/ [exp(ℏω_Lo2/kT)-1]+Γ_iexp(-<E _b>/kT)/. The impurity binding energy, <E_b>, was found to decrease as the Cd composition increases.

Original language	English
Pages (from-to)	5145-5150
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	8 A
DOIs	https://doi.org/10.1143/JJAP.43.5145
State	Published - Aug 2004

Keywords

Activation energy
Molecular beam epitaxy
Photoluminescence
ZnCdSe epilayer

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Kuo, M. C., Chiu, K. C., Shih, T. H., Lai, Y. J., Yang, C. S., Chen, W.-K., Chuu, D. S., Lee, M. C., Chou, W.-C., Jeng, S. Y., Shih, Y. T., & Lan, W. H. (2004). Optical properties of Zn_1-xCd_xSe epilayers grown on (100) GaAs by molecular beam epitaxy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43(8 A), 5145-5150. https://doi.org/10.1143/JJAP.43.5145

@article{f30102f9952d4e0e86e18c7dcdd70147,

title = "Optical properties of Zn1-xCdxSe epilayers grown on (100) GaAs by molecular beam epitaxy",

abstract = "Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161K to 368 K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by ΓT(T) = Γ0 + Γ + ΓaT + ΓLo1/ [exp(ℏωLo1/kT)-1]+ΓLo2/ [exp(ℏωLo2/kT)-1]+Γiexp(-b>/kT)/. The impurity binding energy, b>, was found to decrease as the Cd composition increases.",

keywords = "Activation energy, Molecular beam epitaxy, Photoluminescence, ZnCdSe epilayer",

author = "Kuo, {Ming Chin} and Chiu, {Kuan Cheng} and Shih, {Tsai Hsuai} and Lai, {Yi Jen} and Yang, {Chu Shou} and Wei-Kuo Chen and Chuu, {Der San} and Lee, {Ming Chih} and Wu-Ching Chou and Jeng, {Syang Ywan} and Shih, {Yu Tai} and Lan, {Wen Ho}",

year = "2004",

month = aug,

doi = "10.1143/JJAP.43.5145",

language = "English",

volume = "43",

pages = "5145--5150",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 A",

}

Kuo, MC, Chiu, KC, Shih, TH, Lai, YJ, Yang, CS, Chen, W-K, Chuu, DS, Lee, MC, Chou, W-C, Jeng, SY, Shih, YT & Lan, WH 2004, 'Optical properties of Zn_1-xCd_xSe epilayers grown on (100) GaAs by molecular beam epitaxy', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 43, no. 8 A, pp. 5145-5150. https://doi.org/10.1143/JJAP.43.5145

TY - JOUR

T1 - Optical properties of Zn1-xCdxSe epilayers grown on (100) GaAs by molecular beam epitaxy

AU - Kuo, Ming Chin

AU - Chiu, Kuan Cheng

AU - Shih, Tsai Hsuai

AU - Lai, Yi Jen

AU - Yang, Chu Shou

AU - Chen, Wei-Kuo

AU - Chuu, Der San

AU - Lee, Ming Chih

AU - Chou, Wu-Ching

AU - Jeng, Syang Ywan

AU - Shih, Yu Tai

AU - Lan, Wen Ho

PY - 2004/8

Y1 - 2004/8

N2 - Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161K to 368 K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by ΓT(T) = Γ0 + Γ + ΓaT + ΓLo1/ [exp(ℏωLo1/kT)-1]+ΓLo2/ [exp(ℏωLo2/kT)-1]+Γiexp(-b>/kT)/. The impurity binding energy, b>, was found to decrease as the Cd composition increases.

AB - Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161K to 368 K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by ΓT(T) = Γ0 + Γ + ΓaT + ΓLo1/ [exp(ℏωLo1/kT)-1]+ΓLo2/ [exp(ℏωLo2/kT)-1]+Γiexp(-b>/kT)/. The impurity binding energy, b>, was found to decrease as the Cd composition increases.

KW - Activation energy

KW - Molecular beam epitaxy

KW - Photoluminescence

KW - ZnCdSe epilayer

UR - http://www.scopus.com/inward/record.url?scp=6344282783&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.5145

DO - 10.1143/JJAP.43.5145

M3 - Article

AN - SCOPUS:6344282783

SN - 0021-4922

VL - 43

SP - 5145

EP - 5150

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 8 A

ER -

Optical properties of Zn_1-xCd_xSe epilayers grown on (100) GaAs by molecular beam epitaxy

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