Abstract
We report the observation of green emission centered at 500nm, accompanied with luminescence enhancement and spectral blue shift (∼31meV) in the bandedge emission from a-plane grown gallium nitride (GaN) passivated with gallium hydroxide (GaOOH). From study of the photo-current response and polarization-resolved low-temperature microphotoluminescence (μ-PL) we resolved an evolution of gain competition process between the green and the UV emission bands. By dissolving the oxide we recover the emission characteristics of the as-grown a-GaN. These observations can be ascribed to a formation of compressively-strained a-GaN due to a coherently grown GaOOH atop layer. The latter is responsible for the spectral blue shift and the generation of acceptor like deep-levels causing the green-band transition in the emission and photo-current response. Enhancement of bandedge emission from the oxide covered a-GaN is due to the GaOOH surface passivation effect which was prepared by the photo-enhance wet oxidation method.
| Original language | English |
|---|---|
| Pages (from-to) | 1780-1782 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 6 |
| DOIs | |
| State | Published - 13 May 2008 |
| Event | 7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 16 Sep 2007 → 21 Sep 2007 |
Keywords
- 73.50.Pz
- 81.41.Tv
- 78.55.Cr
- 81.15.Gh