Optical properties of a-plane GaN strained by photo-chemically grown gallium hydroxide

S. L. Wang, B. C. Yeh, H. M. Wu, L. H. Peng*, C. M. Lai, T. S. Ko, Tien-chang Lu, S. C. Wang, A. H. Kung

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


We report the observation of green emission centered at 500nm, accompanied with luminescence enhancement and spectral blue shift (∼31meV) in the bandedge emission from a-plane grown gallium nitride (GaN) passivated with gallium hydroxide (GaOOH). From study of the photo-current response and polarization-resolved low-temperature microphotoluminescence (μ-PL) we resolved an evolution of gain competition process between the green and the UV emission bands. By dissolving the oxide we recover the emission characteristics of the as-grown a-GaN. These observations can be ascribed to a formation of compressively-strained a-GaN due to a coherently grown GaOOH atop layer. The latter is responsible for the spectral blue shift and the generation of acceptor like deep-levels causing the green-band transition in the emission and photo-current response. Enhancement of bandedge emission from the oxide covered a-GaN is due to the GaOOH surface passivation effect which was prepared by the photo-enhance wet oxidation method.

Original languageEnglish
Pages (from-to)1780-1782
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
StatePublished - 13 May 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 16 Sep 200721 Sep 2007


  • 73.50.Pz
  • 81.41.Tv
  • 78.55.Cr
  • 81.15.Gh


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