Optical properties associated with strain relaxations in thick InGaN epitaxial films

Wen Che Tsai; Chia He Hsu; Shao Fu Fu; Fang Wei Lee; Chin Yu Chen; Wu-Ching Chou; Wei-Kuo Chen; Wen-Hao Chang

doi:10.1364/OE.22.00A416

Optical properties associated with strain relaxations in thick InGaN epitaxial films

Wen Che Tsai, Chia He Hsu, Shao Fu Fu, Fang Wei Lee, Chin Yu Chen, Wu-Ching Chou, Wei-Kuo Chen, Wen-Hao Chang

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Structural and optical properties of thick InGaN layers with strain and composition inhomogeneities are investigated. High resolution xray diffractions (XRD) and reciprocal space mapping (RSM) along an asymmetric axis reveal that the In composition inhomogeneity is accompanied by strain relaxations during the growth of thick InGaN layers. According to the structural analysis, the commonly observed double photoluminescence (PL) peaks have been confirmed to be associated with the strain relaxation in thick InGaN films. Temperature- dependent PL measurements further indicate that the relaxed phase in InGaN films exhibits better emission efficiency than the strained phase. Recombination dynamics reveal that the carrier localization effect is more pronounced in the relaxed phase due to the compositional pulling effect. The correlations between emission efficiency and localization effect in thick InGaN films are discussed.

Original language	English
Pages (from-to)	A416-A424
Number of pages	9
Journal	Optics Express
Volume	22
Issue number	S2
DOIs	https://doi.org/10.1364/OE.22.00A416
State	Published - 10 Mar 2014

Access to Document

10.1364/OE.22.00A416

Cite this

@article{5ed59d0e0f56458ea8960ee1c9d66840,

title = "Optical properties associated with strain relaxations in thick InGaN epitaxial films",

abstract = "Structural and optical properties of thick InGaN layers with strain and composition inhomogeneities are investigated. High resolution xray diffractions (XRD) and reciprocal space mapping (RSM) along an asymmetric axis reveal that the In composition inhomogeneity is accompanied by strain relaxations during the growth of thick InGaN layers. According to the structural analysis, the commonly observed double photoluminescence (PL) peaks have been confirmed to be associated with the strain relaxation in thick InGaN films. Temperature- dependent PL measurements further indicate that the relaxed phase in InGaN films exhibits better emission efficiency than the strained phase. Recombination dynamics reveal that the carrier localization effect is more pronounced in the relaxed phase due to the compositional pulling effect. The correlations between emission efficiency and localization effect in thick InGaN films are discussed.",

author = "Tsai, {Wen Che} and Hsu, {Chia He} and Fu, {Shao Fu} and Lee, {Fang Wei} and Chen, {Chin Yu} and Wu-Ching Chou and Wei-Kuo Chen and Wen-Hao Chang",

year = "2014",

month = mar,

day = "10",

doi = "10.1364/OE.22.00A416",

language = "English",

volume = "22",

pages = "A416--A424",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "S2",

}

TY - JOUR

T1 - Optical properties associated with strain relaxations in thick InGaN epitaxial films

AU - Tsai, Wen Che

AU - Hsu, Chia He

AU - Fu, Shao Fu

AU - Lee, Fang Wei

AU - Chen, Chin Yu

AU - Chou, Wu-Ching

AU - Chen, Wei-Kuo

AU - Chang, Wen-Hao

PY - 2014/3/10

Y1 - 2014/3/10

N2 - Structural and optical properties of thick InGaN layers with strain and composition inhomogeneities are investigated. High resolution xray diffractions (XRD) and reciprocal space mapping (RSM) along an asymmetric axis reveal that the In composition inhomogeneity is accompanied by strain relaxations during the growth of thick InGaN layers. According to the structural analysis, the commonly observed double photoluminescence (PL) peaks have been confirmed to be associated with the strain relaxation in thick InGaN films. Temperature- dependent PL measurements further indicate that the relaxed phase in InGaN films exhibits better emission efficiency than the strained phase. Recombination dynamics reveal that the carrier localization effect is more pronounced in the relaxed phase due to the compositional pulling effect. The correlations between emission efficiency and localization effect in thick InGaN films are discussed.

AB - Structural and optical properties of thick InGaN layers with strain and composition inhomogeneities are investigated. High resolution xray diffractions (XRD) and reciprocal space mapping (RSM) along an asymmetric axis reveal that the In composition inhomogeneity is accompanied by strain relaxations during the growth of thick InGaN layers. According to the structural analysis, the commonly observed double photoluminescence (PL) peaks have been confirmed to be associated with the strain relaxation in thick InGaN films. Temperature- dependent PL measurements further indicate that the relaxed phase in InGaN films exhibits better emission efficiency than the strained phase. Recombination dynamics reveal that the carrier localization effect is more pronounced in the relaxed phase due to the compositional pulling effect. The correlations between emission efficiency and localization effect in thick InGaN films are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84896334332&partnerID=8YFLogxK

U2 - 10.1364/OE.22.00A416

DO - 10.1364/OE.22.00A416

M3 - Article

AN - SCOPUS:84896334332

SN - 1094-4087

VL - 22

SP - A416-A424

JO - Optics Express

JF - Optics Express

IS - S2

ER -

Optical properties associated with strain relaxations in thick InGaN epitaxial films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this