TY - JOUR
T1 - Optical phonon emission in GaAs/AlAs and GaAs/Al0.7Ga0.3As multiple quantum well structures
AU - Sun, Kien-Wen
AU - Wang, C. M.
AU - Chang, H. Y.
AU - Wang, S. Y.
AU - Lee, C. P.
PY - 2000/12
Y1 - 2000/12
N2 - We have performed Raman scattering measurements and hot electron-neutral acceptor (hot(e, angstrom)) luminescence experiments on Be-doped GaAs/AlAs and GaAs/Al0.7Ga0.3As multiple quantum well structures, with fixed well width of 50 angstroms and barrier thickness of 5, 25, 50,120 angstroms, to determine the optical phonon energy emitted by the hot electrons excited in the quantum wells. It was shown that the relaxation of electrons in the GaAs layer is dominated by the AlAs-like optical phonon emission for samples with larger barriers, but by GaAs optical phonons for smaller barriers.
AB - We have performed Raman scattering measurements and hot electron-neutral acceptor (hot(e, angstrom)) luminescence experiments on Be-doped GaAs/AlAs and GaAs/Al0.7Ga0.3As multiple quantum well structures, with fixed well width of 50 angstroms and barrier thickness of 5, 25, 50,120 angstroms, to determine the optical phonon energy emitted by the hot electrons excited in the quantum wells. It was shown that the relaxation of electrons in the GaAs layer is dominated by the AlAs-like optical phonon emission for samples with larger barriers, but by GaAs optical phonons for smaller barriers.
UR - http://www.scopus.com/inward/record.url?scp=0034496924&partnerID=8YFLogxK
U2 - 10.1016/S0022-2313(00)00231-3
DO - 10.1016/S0022-2313(00)00231-3
M3 - Article
AN - SCOPUS:0034496924
SN - 0022-2313
VL - 92
SP - 145
EP - 150
JO - Journal of Luminescence
JF - Journal of Luminescence
IS - 1-2
ER -