Optical coupling from ingaas subcell to ingap subcell in ingap/ingaas/ge multi-junction solar cells

G. W. Shu, Jiunn-Yuan Lin, H. T. Jian, J. L. Shen, S. C. Wang, C. L. Chou, Wu-Ching Chou, C. H. Wu, C. H. Chiu, Hao-Chung Kuo

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.

Original languageEnglish
Pages (from-to)A123-A130
JournalOptics Express
Volume21
Issue number101
DOIs
StatePublished - 14 Jan 2013

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