Optical coupling from ingaas subcell to ingap subcell in ingap/ingaas/ge multi-junction solar cells

G. W. Shu; Jiunn-Yuan Lin; H. T. Jian; J. L. Shen; S. C. Wang; C. L. Chou; Wu-Ching Chou; C. H. Wu; C. H. Chiu; Hao-Chung Kuo

doi:10.1364/OE.21.00A123

Optical coupling from ingaas subcell to ingap subcell in ingap/ingaas/ge multi-junction solar cells

G. W. Shu, Jiunn-Yuan Lin, H. T. Jian, J. L. Shen, S. C. Wang, C. L. Chou, Wu-Ching Chou, C. H. Wu, C. H. Chiu, Hao-Chung Kuo

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17 Scopus citations

Abstract

Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.

Original language	English
Pages (from-to)	A123-A130
Journal	Optics Express
Volume	21
Issue number	101
DOIs	https://doi.org/10.1364/OE.21.00A123
State	Published - 14 Jan 2013

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title = "Optical coupling from ingaas subcell to ingap subcell in ingap/ingaas/ge multi-junction solar cells",

abstract = "Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.",

author = "Shu, {G. W.} and Jiunn-Yuan Lin and Jian, {H. T.} and Shen, {J. L.} and Wang, {S. C.} and Chou, {C. L.} and Wu-Ching Chou and Wu, {C. H.} and Chiu, {C. H.} and Hao-Chung Kuo",

year = "2013",

month = jan,

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doi = "10.1364/OE.21.00A123",

language = "English",

volume = "21",

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journal = "Optics Express",

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TY - JOUR

T1 - Optical coupling from ingaas subcell to ingap subcell in ingap/ingaas/ge multi-junction solar cells

AU - Shu, G. W.

AU - Lin, Jiunn-Yuan

AU - Jian, H. T.

AU - Shen, J. L.

AU - Wang, S. C.

AU - Chou, C. L.

AU - Chou, Wu-Ching

AU - Wu, C. H.

AU - Chiu, C. H.

AU - Kuo, Hao-Chung

PY - 2013/1/14

Y1 - 2013/1/14

N2 - Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.

AB - Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.

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U2 - 10.1364/OE.21.00A123

DO - 10.1364/OE.21.00A123

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AN - SCOPUS:84872702087

SN - 1094-4087

VL - 21

SP - A123-A130

JO - Optics Express

JF - Optics Express

IS - 101

ER -

Optical coupling from ingaas subcell to ingap subcell in ingap/ingaas/ge multi-junction solar cells

Abstract

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