Optical characterization of isoelectronic ZnSe1-xOx semiconductors

Y. C. Lin; H. L. Chung; J. T. Ku; C. Y. Chen; K. F. Chien; W. C. Fan; L. Lee; J. I. Chyi; Wu-Ching Chou; Wen-Hao Chang; Wei-Kuo Chen

doi:10.1016/j.jcrysgro.2010.10.106

Optical characterization of isoelectronic ZnSe_1-xO_x semiconductors

Y. C. Lin, H. L. Chung, J. T. Ku, C. Y. Chen, K. F. Chien, W. C. Fan, L. Lee, J. I. Chyi, Wu-Ching Chou, Wen-Hao Chang, Wei-Kuo Chen

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe_1-xO_x (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe_1-xO_x decreases with the increase in O concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent β.

Original language	English
Pages (from-to)	122-126
Number of pages	5
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.10.106
State	Published - 15 May 2011

Keywords

B1. Alloys
A3. Molecular beam epitaxy
B1. Oxides
B2. Semiconducting II-VI materials
B2. Semiconducting ternary compounds
B1. Zinc compounds

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title = "Optical characterization of isoelectronic ZnSe1-xOx semiconductors",

abstract = "We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe1-xOx (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe1-xOx decreases with the increase in O concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent β.",

keywords = "B1. Alloys, A3. Molecular beam epitaxy, B1. Oxides, B2. Semiconducting II-VI materials, B2. Semiconducting ternary compounds, B1. Zinc compounds",

author = "Lin, {Y. C.} and Chung, {H. L.} and Ku, {J. T.} and Chen, {C. Y.} and Chien, {K. F.} and Fan, {W. C.} and L. Lee and Chyi, {J. I.} and Wu-Ching Chou and Wen-Hao Chang and Wei-Kuo Chen",

year = "2011",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2010.10.106",

language = "English",

volume = "323",

pages = "122--126",

journal = "Journal of Crystal Growth",

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T1 - Optical characterization of isoelectronic ZnSe1-xOx semiconductors

AU - Lin, Y. C.

AU - Chung, H. L.

AU - Ku, J. T.

AU - Chen, C. Y.

AU - Chien, K. F.

AU - Fan, W. C.

AU - Lee, L.

AU - Chyi, J. I.

AU - Chou, Wu-Ching

AU - Chang, Wen-Hao

AU - Chen, Wei-Kuo

PY - 2011/5/15

Y1 - 2011/5/15

N2 - We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe1-xOx (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe1-xOx decreases with the increase in O concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent β.

AB - We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe1-xOx (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe1-xOx decreases with the increase in O concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent β.

KW - B1. Alloys

KW - A3. Molecular beam epitaxy

KW - B1. Oxides

KW - B2. Semiconducting II-VI materials

KW - B2. Semiconducting ternary compounds

KW - B1. Zinc compounds

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U2 - 10.1016/j.jcrysgro.2010.10.106

DO - 10.1016/j.jcrysgro.2010.10.106

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AN - SCOPUS:79958017913

SN - 0022-0248

VL - 323

SP - 122

EP - 126

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Optical characterization of isoelectronic ZnSe_1-xO_x semiconductors

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Keywords

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