Optical characterization of isoelectronic ZnSe1-xOx semiconductors

Y. C. Lin, H. L. Chung, J. T. Ku, C. Y. Chen, K. F. Chien, W. C. Fan, L. Lee, J. I. Chyi, Wu-Ching Chou, Wen-Hao Chang, Wei-Kuo Chen

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We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe1-xOx (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe1-xOx decreases with the increase in O concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent β.

Original languageEnglish
Pages (from-to)122-126
Number of pages5
JournalJournal of Crystal Growth
Issue number1
StatePublished - 15 May 2011


  • B1. Alloys
  • A3. Molecular beam epitaxy
  • B1. Oxides
  • B2. Semiconducting II-VI materials
  • B2. Semiconducting ternary compounds
  • B1. Zinc compounds


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