Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator

Pei-Wen Li; David M.T. Kuo; Wei Ming Liao; Ming J. Tsai

doi:10.1143/JJAP.43.7788

Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator

Pei-Wen Li^*, David M.T. Kuo, Wei Ming Liao, Ming J. Tsai

^*Corresponding author for this work

Institute of Electronics

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18 Scopus citations

Abstract

Germanium quantum dots embedded in a SiO₂ matrix fabricated by selective oxidation of SiGe-on-insulator structure were examined by high-resolution transmission electron microscopy, cathodoluminescence spectroscopy, and spectroscopic ellipsometry. The dot size and crystallite morphology were strongly dependent on thermal oxidation conditions. Visible photoemissions from Ge dots were observed at room temperature and they exhibited pronounced blueshifts of peak energies with increasing oxidation time, which can be correlated to the change in dot size, shape, or crystalline structure transition. The extracted refractive index of Ge dots examined by spectroscopic ellipsometry is lower than that of bulk Ge, which is also correlated to the nanocrystal size effects.

Original language	English
Pages (from-to)	7788-7792
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	11 A
DOIs	https://doi.org/10.1143/JJAP.43.7788
State	Published - Nov 2004

Keywords

Cathodoluminescence
Dielectric function
Germanium
Quantum dots

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10.1143/JJAP.43.7788

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title = "Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator",

abstract = "Germanium quantum dots embedded in a SiO2 matrix fabricated by selective oxidation of SiGe-on-insulator structure were examined by high-resolution transmission electron microscopy, cathodoluminescence spectroscopy, and spectroscopic ellipsometry. The dot size and crystallite morphology were strongly dependent on thermal oxidation conditions. Visible photoemissions from Ge dots were observed at room temperature and they exhibited pronounced blueshifts of peak energies with increasing oxidation time, which can be correlated to the change in dot size, shape, or crystalline structure transition. The extracted refractive index of Ge dots examined by spectroscopic ellipsometry is lower than that of bulk Ge, which is also correlated to the nanocrystal size effects.",

keywords = "Cathodoluminescence, Dielectric function, Germanium, Quantum dots",

author = "Pei-Wen Li and Kuo, {David M.T.} and Liao, {Wei Ming} and Tsai, {Ming J.}",

year = "2004",

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doi = "10.1143/JJAP.43.7788",

language = "English",

volume = "43",

pages = "7788--7792",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11 A",

}

Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator. / Li, Pei-Wen; Kuo, David M.T.; Liao, Wei Ming et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 11 A, 11.2004, p. 7788-7792.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator

AU - Li, Pei-Wen

AU - Kuo, David M.T.

AU - Liao, Wei Ming

AU - Tsai, Ming J.

PY - 2004/11

Y1 - 2004/11

N2 - Germanium quantum dots embedded in a SiO2 matrix fabricated by selective oxidation of SiGe-on-insulator structure were examined by high-resolution transmission electron microscopy, cathodoluminescence spectroscopy, and spectroscopic ellipsometry. The dot size and crystallite morphology were strongly dependent on thermal oxidation conditions. Visible photoemissions from Ge dots were observed at room temperature and they exhibited pronounced blueshifts of peak energies with increasing oxidation time, which can be correlated to the change in dot size, shape, or crystalline structure transition. The extracted refractive index of Ge dots examined by spectroscopic ellipsometry is lower than that of bulk Ge, which is also correlated to the nanocrystal size effects.

AB - Germanium quantum dots embedded in a SiO2 matrix fabricated by selective oxidation of SiGe-on-insulator structure were examined by high-resolution transmission electron microscopy, cathodoluminescence spectroscopy, and spectroscopic ellipsometry. The dot size and crystallite morphology were strongly dependent on thermal oxidation conditions. Visible photoemissions from Ge dots were observed at room temperature and they exhibited pronounced blueshifts of peak energies with increasing oxidation time, which can be correlated to the change in dot size, shape, or crystalline structure transition. The extracted refractive index of Ge dots examined by spectroscopic ellipsometry is lower than that of bulk Ge, which is also correlated to the nanocrystal size effects.

KW - Cathodoluminescence

KW - Dielectric function

KW - Germanium

KW - Quantum dots

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DO - 10.1143/JJAP.43.7788

M3 - Article

AN - SCOPUS:11144244606

SN - 0021-4922

VL - 43

SP - 7788

EP - 7792

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 11 A

ER -

Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator

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