Optical and electrical investigations of isoelectronic In-doped GaN films

C. K. Shu*, W. H. Lee, Y. C. Pan, C. C. Chen, H. C. Lin, J. Ou, W. H. Chen, Wei-Kuo Chen, M. C. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects.

Original languageEnglish
Pages (from-to)291-293
Number of pages3
JournalSolid State Communications
Volume114
Issue number5
DOIs
StatePublished - 11 Apr 2000

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