Optical and deep-level spectroscopic study on In 0.38 GaAsN x /GaAs single-quantum-well structures of x≥3% grown by molecular beam epitaxy

T. S. Lay*, E. Y. Lin, C. Y. Chang, K. M. Kong, L. P. Chen, T. Y. Chang, J. S. Wang, Kuo-Jui Lin, J. Y. Chi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The optical and carrier transport properties of In 0.38 GaAsN x /GaAs single-quantum-well diode laser structures of x ranging from 3% to 3.8% were investigated by temperature-dependent photoluminescence (PL) spectroscopy, photocurrent spectroscopy, differential absorption spectroscopy, and deep-level transient spectroscopy (DLTS). A carrier localized state of ∼12 meV activation energy and of a delocalization temperature at ∼150 K was observed by PL thermal quenching data. We also observed a Gaussian shape absorption edge of increasing absorption strength with the reverse bias in the photocurrent spectra. DLTS data show a hole trap of 0.34 eV activation energy possibly originating from the In 0.38 GaAsN x layer.

Original languageEnglish
Pages (from-to)575-579
Number of pages5
JournalJournal of Crystal Growth
Volume278
Issue number1-4
DOIs
StatePublished - 1 May 2005
Event13th International Conference on Molecular Beam Epitaxy -
Duration: 22 Aug 200427 Aug 2004

Keywords

  • A1. Characterization
  • A1. Low dimensional structures
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

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