TY - JOUR
T1 - One-Step Cleaning Solution to Replace the Conventional RCA Two-Step Cleaning Recipe for Pregate Oxide Cleaning
AU - Pan, Tung Ming
AU - Lei, Tan Fu
AU - Chao, Tien-Sheng
AU - Liaw, Ming Chi
AU - Ko, Fu-Hsiang
AU - Lu, Chih Peng
PY - 2001/6/1
Y1 - 2001/6/1
N2 - This work proposes an advanced wet chemical one-step cleaning process which omits the hydrochloric acid/hydrogen peroxide/ water mixture (HPM) step in RCA. A novel one-step cleaning solution had been developed for pregate oxide cleaning to replace the conventional RCA two-step cleaning recipe, which used ammonia/hydrogen peroxide (or SC-1) and HPM (or SC-2) step. Tetramethylammonium hydroxide (TMAH) and ethylenediaminetetraacetic acid (EDTA) were added into the RCA SC-1 cleaning solution to enhance cleaning efficiency. From the experimental results, the particles and metallic contamination on the bare Si water surface could removed significantly by applying this one-step cleaning solution. The effectiveness of various cleaning recipes and their interaction mechanism with silicon surfaces were studied. The surface adsorption and double layer models could explain the surface behavior of TMAH solutions. Based on the model, the particle, surface roughness and metallic contaminants can be realized. It was observed that the electrical properties of metal oxide semiconductor capacitors after cleaning with this novel solution were better than those after the conventional RCA cleaning. Besides, the cleaning method combining NH4OH. tetramethylammonium hydroxide, ethylenediaminetetraacetic acid, and H2O2. at 80°C for min showed high performance on particle removal, metal cleaning, surface smoothness, and electrical properties. Hence, this one-step cleaning process is very promising for future large sized silicon wafer cleaning due to the advantages of time-saving, low cost, and high performance.
AB - This work proposes an advanced wet chemical one-step cleaning process which omits the hydrochloric acid/hydrogen peroxide/ water mixture (HPM) step in RCA. A novel one-step cleaning solution had been developed for pregate oxide cleaning to replace the conventional RCA two-step cleaning recipe, which used ammonia/hydrogen peroxide (or SC-1) and HPM (or SC-2) step. Tetramethylammonium hydroxide (TMAH) and ethylenediaminetetraacetic acid (EDTA) were added into the RCA SC-1 cleaning solution to enhance cleaning efficiency. From the experimental results, the particles and metallic contamination on the bare Si water surface could removed significantly by applying this one-step cleaning solution. The effectiveness of various cleaning recipes and their interaction mechanism with silicon surfaces were studied. The surface adsorption and double layer models could explain the surface behavior of TMAH solutions. Based on the model, the particle, surface roughness and metallic contaminants can be realized. It was observed that the electrical properties of metal oxide semiconductor capacitors after cleaning with this novel solution were better than those after the conventional RCA cleaning. Besides, the cleaning method combining NH4OH. tetramethylammonium hydroxide, ethylenediaminetetraacetic acid, and H2O2. at 80°C for min showed high performance on particle removal, metal cleaning, surface smoothness, and electrical properties. Hence, this one-step cleaning process is very promising for future large sized silicon wafer cleaning due to the advantages of time-saving, low cost, and high performance.
UR - http://www.scopus.com/inward/record.url?scp=0006806876&partnerID=8YFLogxK
U2 - 10.1149/1.1369374
DO - 10.1149/1.1369374
M3 - Article
AN - SCOPUS:0006806876
SN - 0013-4651
VL - 148
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 6
ER -
