One-dimensional group III-nitrides: Growth, properties, and applications in nanosensing and nano-optoelectronics

Surojit Chattopadhyay*, Abhijit Ganguly, Kuei Hsien Chen, Li Chyong Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Scopus citations


This review will give a brief introduction to the growth and characterization methods of both binary and ternary compounds, in particular those exhibiting one-dimensionality, of the family to orient the readers about the material system to be discussed. A section will deal with the size and shape selection in group III nitride nanomaterials with a stress on intriguing morphologies such as nanowires, nanotips, and nanobelts. Complex structures, such as hierarchical and core-shell structures, will be introduced. Optical, electrical, and mechanical property, such as hardness, will be discussed in a greater detail, distinguishing the bulk from the nano wherever possible. Available models of electrical conduction and photoconduction in nanomaterials and their dependence on the actual size of the objects will be presented and compared. Optical properties of ensemble and single nanostructures, wherever possible, will be addressed in detail. The section on application will focus mainly on the sensor applications, including chemical sensors, gas sensors, and biosensors, with a thrust on DNA sensing. Because popular applications such as light-emitting diodes (LEDs) and field effect transistors (FETs) have already been reviewed extensively, only major contributions to this fieldfor example, nano-LEDswill be discussed. Some recent advances in the group III-nitride materials family will be presented that will indicate future directions of research in this area.

Original languageEnglish
Pages (from-to)224-279
Number of pages56
JournalCritical Reviews in Solid State and Materials Sciences
Issue number3-4
StatePublished - Jul 2009


  • AIN
  • GaN
  • InN
  • Nano-optoelectronics
  • Nano-sensing
  • Nanostructures


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