One-dimensional edge state of Bi thin film grown on Si(111)

Naoya Kawakami; Chun-Liang Lin; Maki Kawai; Ryuichi Arafune; Noriaki Takagi

doi:10.1063/1.4927206

One-dimensional edge state of Bi thin film grown on Si(111)

Naoya Kawakami, Chun-Liang Lin, Maki Kawai, Ryuichi Arafune, Noriaki Takagi

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.

Original language	English
Article number	031602
Journal	Applied Physics Letters
Volume	107
Issue number	3
DOIs	https://doi.org/10.1063/1.4927206
State	Published - 20 Jul 2015

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abstract = "The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.",

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AU - Kawakami, Naoya

AU - Lin, Chun-Liang

AU - Kawai, Maki

AU - Arafune, Ryuichi

AU - Takagi, Noriaki

PY - 2015/7/20

Y1 - 2015/7/20

N2 - The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.

AB - The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.

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One-dimensional edge state of Bi thin film grown on Si(111)

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