On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory

Chun Li Lo; Mei Chin Chen; Jiun Jia Huang; Tuo-Hung Hou

doi:10.1109/VLSI-TSA.2013.6545588

On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory

Chun Li Lo, Mei Chin Chen, Jiun Jia Huang, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Original language	English
Title of host publication	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
Pages	1-2
Number of pages	2
DOIs	https://doi.org/10.1109/VLSI-TSA.2013.6545588
State	Published - 22 Apr 2013
Event	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan Duration: 22 Apr 2013 → 24 Apr 2013

Publication series

Name	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
Country/Territory	Taiwan
City	Hsinchu
Period	22/04/13 → 24/04/13

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10.1109/VLSI-TSA.2013.6545588

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Lo, C. L., Chen, M. C., Huang, J. J., & Hou, T.-H. (2013). On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 (pp. 1-2). Article 6545588 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). https://doi.org/10.1109/VLSI-TSA.2013.6545588

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title = "On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory",

author = "Lo, {Chun Li} and Chen, {Mei Chin} and Huang, {Jiun Jia} and Tuo-Hung Hou",

year = "2013",

month = apr,

day = "22",

doi = "10.1109/VLSI-TSA.2013.6545588",

language = "English",

isbn = "9781467330817",

series = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

pages = "1--2",

booktitle = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

note = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 ; Conference date: 22-04-2013 Through 24-04-2013",

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Lo, CL, Chen, MC, Huang, JJ & Hou, T-H 2013, On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory. in 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013., 6545588, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, pp. 1-2, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, Hsinchu, Taiwan, 22/04/13. https://doi.org/10.1109/VLSI-TSA.2013.6545588

On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory. / Lo, Chun Li; Chen, Mei Chin; Huang, Jiun Jia et al.
2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. p. 1-2 6545588 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory

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AU - Huang, Jiun Jia

AU - Hou, Tuo-Hung

PY - 2013/4/22

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DO - 10.1109/VLSI-TSA.2013.6545588

M3 - Conference contribution

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T3 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

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EP - 2

BT - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

T2 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Y2 - 22 April 2013 through 24 April 2013

ER -

On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory

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