Keyphrases
Diode
100%
Erbium
100%
Nitrogen Doping
100%
Spray Pyrolysis
100%
Oxide Diode
100%
Magnesium Zinc Oxide
100%
Nitrogen Content
37%
Injection Current
25%
Luminescence Properties
25%
MgZnO
25%
Si Substrate
12%
Current-voltage
12%
Active Layer
12%
Aqueous Solution
12%
Scanning Electron Microscopy
12%
Green Emission
12%
High Concentration
12%
Capacitance-voltage
12%
N-layer
12%
Photoluminescence Analysis
12%
Breakdown Voltage
12%
Bias Conditions
12%
Film Surface
12%
Zinc Acetate
12%
High Nitrogen Content
12%
Acetate
12%
Oxygen Defects
12%
Light Spectrum
12%
N Content
12%
Diode Current
12%
Concentration Distribution
12%
Nitrate Precursors
12%
Ammonium Acetate
12%
Hexagonal Flake
12%
Indium Nitrate
12%
Magnesium Nitrate
12%
Luminescence Characteristics
12%
Optimal Injection
12%
Concentration Phenomena
12%
Spectrum Variation
12%
Interface Concentration
12%
Engineering
Current Injection
100%
Pyrolysis
100%
Luminescence Property
100%
Si Substrate
50%
Breakdown Voltage
50%
Active Layer
50%
Green Emission
50%
Film Surface
50%
Related Defect
50%
Concentration Distribution
50%
Aqueous Solution
50%
Material Science
Zinc Oxide
100%
Luminescence
100%
Magnesium
100%
Erbium
100%
Spray Pyrolysis
100%
Film
33%
Indium
33%
Capacitance
33%
Scanning Electron Microscopy
33%
Photoluminescence
33%
Surface (Surface Science)
33%