On the hole injection for III-nitride based deep ultraviolet light-emitting diodes

Luping Li; Yonghui Zhang; Shu Xu; Wengang Bi; Zi Hui Zhang; Hao-Chung Kuo

doi:10.3390/ma10101221

On the hole injection for III-nitride based deep ultraviolet light-emitting diodes

Luping Li, Yonghui Zhang, Shu Xu, Wengang Bi, Zi Hui Zhang^*, Hao-Chung Kuo

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Review article › peer-review

41 Scopus citations

Abstract

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

Original language	English
Article number	1221
Pages (from-to)	1-17
Number of pages	17
Journal	Materials
Volume	10
Issue number	10
DOIs	https://doi.org/10.3390/ma10101221
State	Published - 24 Oct 2017

Keywords

External quantum efficiency
Hole injection efficiency
III-nitride semiconductor
Internal quantum efficiency
Light-emitting diode
Multiple quantum well

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10.3390/ma10101221

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title = "On the hole injection for III-nitride based deep ultraviolet light-emitting diodes",

abstract = "The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.",

keywords = "External quantum efficiency, Hole injection efficiency, III-nitride semiconductor, Internal quantum efficiency, Light-emitting diode, Multiple quantum well",

author = "Luping Li and Yonghui Zhang and Shu Xu and Wengang Bi and Zhang, {Zi Hui} and Hao-Chung Kuo",

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T1 - On the hole injection for III-nitride based deep ultraviolet light-emitting diodes

AU - Li, Luping

AU - Zhang, Yonghui

AU - Xu, Shu

AU - Bi, Wengang

AU - Zhang, Zi Hui

AU - Kuo, Hao-Chung

PY - 2017/10/24

Y1 - 2017/10/24

N2 - The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

AB - The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

KW - External quantum efficiency

KW - Hole injection efficiency

KW - III-nitride semiconductor

KW - Internal quantum efficiency

KW - Light-emitting diode

KW - Multiple quantum well

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U2 - 10.3390/ma10101221

DO - 10.3390/ma10101221

M3 - Review article

AN - SCOPUS:85032464263

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SP - 1

EP - 17

JO - Materials

JF - Materials

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ER -

On the hole injection for III-nitride based deep ultraviolet light-emitting diodes

Abstract

Keywords

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