Abstract
A new on-chip transient detection circuit for system-level electrostatic discharge (ESD) protection is proposed. The circuit performance to detect different positive and negative fast electrical transients has been investigated by the HSPICE simulator and verified in a silicon chip. The experimental results in a 0.13-μm CMOS integrated circuit (IC) have confirmed that the proposed on-chip transient detection circuit can be used to detect fast electrical transients during the system-level ESD events. The proposed transient detection circuit can be further combined with the power-on reset circuit to improve the immunity of the CMOS IC products against system-level ESD stress.
Original language | English |
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Pages (from-to) | 13-21 |
Number of pages | 9 |
Journal | IEEE Transactions on Electromagnetic Compatibility |
Volume | 50 |
Issue number | 1 |
DOIs | |
State | Published - 1 Feb 2008 |
Keywords
- Electrical transient detection
- Electrostatic discharge (ESD)
- System-level ESD test
- Transient noise