On-Chip Transient Detection Circuit for Microelectronic Systems Against Electrical Transient Disturbances due to ESD Events

Wen Chieh Chen; Ming-Dou Ker

doi:10.1109/TENCONSpring.2018.8691901

On-Chip Transient Detection Circuit for Microelectronic Systems Against Electrical Transient Disturbances due to ESD Events

Wen Chieh Chen
, Ming-Dou Ker

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A new on-chip transient detection circuit which can detect electrical disturbances of system-level electrostatic discharge (ESD) is proposed. The circuit is designed with reduced physical area by utilizing dual-latched structure. With hardware/firmware co-design method, auto-recovery procedure can be activated by the detection circuit when microelectronic systems suffer system-level ESD events. The immunity level of microelectronic products against the electromagnetic interference (EMI) of ESD events can be effectively improved. The proposed on-chip transient detection circuit has been verified in a 0.18-\boldsymbol{\mu}\mathbf{m} eMos process with 1.8-V devices under system-level ESD tests.

Original language	English
Title of host publication	2018 IEEE Region 10 Symposium, Tensymp 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	36-39
Number of pages	4
ISBN (Electronic)	9781538669891
DOIs	https://doi.org/10.1109/TENCONSpring.2018.8691901
State	Published - 2 Jul 2018
Event	2018 IEEE Region 10 Symposium, Tensymp 2018 - Sydney, Australia Duration: 1 Jul 2018 → 6 Jul 2018

Publication series

Name	2018 IEEE Region 10 Symposium, Tensymp 2018

Conference

Conference	2018 IEEE Region 10 Symposium, Tensymp 2018
Country/Territory	Australia
City	Sydney
Period	1/07/18 → 6/07/18

Keywords

Electromagnetic compatibility (EMC)
Electrostatic discharge (ESD)
System-level ESD
Transient detection circuit

Access to Document

10.1109/TENCONSpring.2018.8691901

Cite this

Chen, W. C., & Ker, M.-D. (2018). On-Chip Transient Detection Circuit for Microelectronic Systems Against Electrical Transient Disturbances due to ESD Events. In 2018 IEEE Region 10 Symposium, Tensymp 2018 (pp. 36-39). Article 8691901 (2018 IEEE Region 10 Symposium, Tensymp 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TENCONSpring.2018.8691901

@inproceedings{a6f4faf7440247d9a446f4c317c2b56e,

title = "On-Chip Transient Detection Circuit for Microelectronic Systems Against Electrical Transient Disturbances due to ESD Events",

abstract = "A new on-chip transient detection circuit which can detect electrical disturbances of system-level electrostatic discharge (ESD) is proposed. The circuit is designed with reduced physical area by utilizing dual-latched structure. With hardware/firmware co-design method, auto-recovery procedure can be activated by the detection circuit when microelectronic systems suffer system-level ESD events. The immunity level of microelectronic products against the electromagnetic interference (EMI) of ESD events can be effectively improved. The proposed on-chip transient detection circuit has been verified in a 0.18-\textbackslash{}boldsymbol\{\textbackslash{}mu\}\textbackslash{}mathbf\{m\} eMos process with 1.8-V devices under system-level ESD tests.",

keywords = "Electromagnetic compatibility (EMC), Electrostatic discharge (ESD), System-level ESD, Transient detection circuit",

author = "Chen, \{Wen Chieh\} and Ming-Dou Ker",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE Region 10 Symposium, Tensymp 2018 ; Conference date: 01-07-2018 Through 06-07-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/TENCONSpring.2018.8691901",

language = "English",

series = "2018 IEEE Region 10 Symposium, Tensymp 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "36--39",

booktitle = "2018 IEEE Region 10 Symposium, Tensymp 2018",

address = "美國",

}

Chen, WC & Ker, M-D 2018, On-Chip Transient Detection Circuit for Microelectronic Systems Against Electrical Transient Disturbances due to ESD Events. in 2018 IEEE Region 10 Symposium, Tensymp 2018., 8691901, 2018 IEEE Region 10 Symposium, Tensymp 2018, Institute of Electrical and Electronics Engineers Inc., pp. 36-39, 2018 IEEE Region 10 Symposium, Tensymp 2018, Sydney, Australia, 1/07/18. https://doi.org/10.1109/TENCONSpring.2018.8691901

On-Chip Transient Detection Circuit for Microelectronic Systems Against Electrical Transient Disturbances due to ESD Events. / Chen, Wen Chieh; Ker, Ming-Dou.
2018 IEEE Region 10 Symposium, Tensymp 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 36-39 8691901 (2018 IEEE Region 10 Symposium, Tensymp 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - On-Chip Transient Detection Circuit for Microelectronic Systems Against Electrical Transient Disturbances due to ESD Events

AU - Chen, Wen Chieh

AU - Ker, Ming-Dou

PY - 2018/7/2

Y1 - 2018/7/2

N2 - A new on-chip transient detection circuit which can detect electrical disturbances of system-level electrostatic discharge (ESD) is proposed. The circuit is designed with reduced physical area by utilizing dual-latched structure. With hardware/firmware co-design method, auto-recovery procedure can be activated by the detection circuit when microelectronic systems suffer system-level ESD events. The immunity level of microelectronic products against the electromagnetic interference (EMI) of ESD events can be effectively improved. The proposed on-chip transient detection circuit has been verified in a 0.18-\boldsymbol{\mu}\mathbf{m} eMos process with 1.8-V devices under system-level ESD tests.

AB - A new on-chip transient detection circuit which can detect electrical disturbances of system-level electrostatic discharge (ESD) is proposed. The circuit is designed with reduced physical area by utilizing dual-latched structure. With hardware/firmware co-design method, auto-recovery procedure can be activated by the detection circuit when microelectronic systems suffer system-level ESD events. The immunity level of microelectronic products against the electromagnetic interference (EMI) of ESD events can be effectively improved. The proposed on-chip transient detection circuit has been verified in a 0.18-\boldsymbol{\mu}\mathbf{m} eMos process with 1.8-V devices under system-level ESD tests.

KW - Electromagnetic compatibility (EMC)

KW - Electrostatic discharge (ESD)

KW - System-level ESD

KW - Transient detection circuit

UR - https://www.scopus.com/pages/publications/85065099378

U2 - 10.1109/TENCONSpring.2018.8691901

DO - 10.1109/TENCONSpring.2018.8691901

M3 - Conference contribution

AN - SCOPUS:85065099378

T3 - 2018 IEEE Region 10 Symposium, Tensymp 2018

SP - 36

EP - 39

BT - 2018 IEEE Region 10 Symposium, Tensymp 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE Region 10 Symposium, Tensymp 2018

Y2 - 1 July 2018 through 6 July 2018

ER -

On-Chip Transient Detection Circuit for Microelectronic Systems Against Electrical Transient Disturbances due to ESD Events

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