@inproceedings{d17d14fbcc274c688bc53bab29200405,
title = "On-chip high-voltage charge pump circuit in standard CMOS processes with polysilicon diodes",
abstract = "An on-chip high-voltage charge pump circuit realized with the polysillcon diodes in standard (bulk) CMOS process is presented in this paper. Because the polysilicon diodes are fully Isolated from the substrate, the output voltage of the charge pump circuit is not limited by the junction breakdown voltage of MOSFETs. The polysilicon diodes can be implemented in the standard CMOS processes without extra process steps. The proposed charge pump circuit has been fabricated in a 0.25-μm 2.5-V standard CMOS process. The output voltage of the 12-stage charge pump circuit can be pumped up to 28.08 V, which is much higher than the n-well/p-substrate breakdown voltage (18.9 V) in a 0.25-μm 2.5-V standard CMOS process.",
author = "Ker, {Ming Dou} and Chen, {Shih Lun}",
year = "2005",
month = jan,
day = "1",
doi = "10.1109/ASSCC.2005.251689",
language = "English",
isbn = "0780391624",
series = "2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005",
publisher = "IEEE Computer Society",
pages = "157--160",
booktitle = "2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005",
address = "United States",
note = "1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005 ; Conference date: 01-11-2005 Through 03-11-2005",
}