On-Chip HBM and HMM ESD Protection Design for RF Applications in 40-nm CMOS Process

Jie Ting Chen, Chun Yu Lin, Rong Kun Chang, Ming-Dou Ker*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


On-chip electrostatic discharge (ESD) protection device with large dimension can sustain high-ESD current, but the parasitic capacitance of the ESD protection device will increase the difficulty of impedance matching and degrade the bandwidth for broadband radio frequency (RF) applications. The traditional distributed ESD protection circuit can achieve good impedance matching, but it has a worse ESD robustness because of larger resistance caused by the input inductor. In this paper, a new distributed ESD protection structure with the stacked diodes with embedded silicon-controlled rectifier is proposed to attain good ESD robustness without degrading the RF performance. The proposed ESD protection circuit has been successfully verified in a 40-nm, 2.5-V CMOS process to sustain a human-metal model of 5 kV. The proposed ESD protection circuit is suitable to protect the broadband RF circuits in advanced nanoscale CMOS technology.

Original languageEnglish
Article number8501596
Pages (from-to)5267-5274
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number12
StatePublished - Dec 2018


  • Distributed electrostatic discharge (ESD) protection
  • ESD
  • radio frequency (RF)
  • silicon-controlled rectifier (SCR)


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